Datasheet > VS-CPV362M4FPBF

VS-CPV362M4FPBF

更新时间： 2024-11-24 14:45:35

品牌	Logo	应用领域
威世 - VISHAY		栅
页数	文件大小	规格书
9页	242K
描述
Insulated Gate Bipolar Transistor,

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VS-CPV362M4FPBF 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
ECCN代码：	EAR99	Factory Lead Time：	20 weeks 1 day
风险等级：	5.67	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

VS-CPV362M4FPBF 数据手册

VS-CPV362M4FPbF

Vishay Semiconductors

www.vishay.com

IGBT SIP Module (Fast IGBT)

FEATURES

• Fully isolated printed circuit board mount

package

• Switching-loss rating includes all “tail” losses

• HEXFRED^®soft ultrafast diodes

• Optimized for medium speed, see fig. 1 for

current vs. frequency curve

• Designed and qualified for industrial level

• UL approved file E78996

SIP (IMS-2)

PRIMARY CHARACTERISTICS

OUTPUT CURRENT IN A TYPICAL 5.0 kHz MOTOR DRIVE

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

V_CES

600 V

DESCRIPTION

_RMSper phase (3.1 kW total)

with T_C= 90 °C

11 A

The IGBT technology is the key to the advanced line of IMS

(Insulated Metal Substrate) power modules. These modules

are more efficient than comparable bipolar transistor

modules, while at the same time having the simpler

gate-drive requirements of the familiar power MOSFET. This

superior technology has now been coupled to a state of the

art materials system that maximizes power throughput with

low thermal resistance. This package is highly suited to

motor drive applications and where space is at a premium.

T_J

125 °C

360 V_DC

0.8

Supply voltage

Power factor

Modulation depth See fig. 1

115 %

_CE(on)(typical)

at I_C= 4.8 A, 25 °C

1.41 V

Speed

1 kHz to 8 kHz

SIP

Package

Circuit configuration

Three phase inverter

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

MAX.

600

8.8

UNITS

Collector to emitter voltage

V_CES

T_C= 25 °C

_C= 100 °C

Continuous collector current, each

IGBT

I_C

4.8

Repetitive rating; V_GE= 20 V, 

pulse width limited by maximum 

junction temperature. See fig. 20

Pulsed collector current

I_CM

V_CC= 80 % (V_CES), V_GE= 20 V, 

L = 10 μH, R_G= 50  See fig. 19

Clamped inductive load current

I_LM

800

Diode continuous forward current

Diode maximum forward current

Gate to emitter voltage

I_F

T_C= 100 °C

3.4

I_FM

V_GE

V_ISOL

Isolation voltage

Any terminal to case, t = 1 min

T_C= 25 °C

2500

V_RMS

Maximum power dissipation, each

IGBT

P_D

T_C= 100 °C

9.1

Operating junction and 

storage temperature range

T_J, T_Stg

-40 to +150

°C

Soldering temperature

For 10 s

300 (0.063" (1.6 mm) from case)

5 to 7

(0.55 to 0.8)

lbf · in

(N · m)

Mounting torque

6-32 or M3 screw

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

_thJC(IGBT)

_thJC(diode)

TYP.

MAX.

5.5

9.0

UNITS

°C/W

Junction to case, each IGBT, one IGBT in conduction

Junction to case, each diode, one diode in conduction

Case to sink, flat, greased surface

Weight of module

_thCS(module)

0.1

20 (0.7)

g (oz.)

Revision: 25-Oct-17

Document Number: 94361

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

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与VS-CPV362M4FPBF相关器件

型号	品牌	获取价格	描述	数据表
VS-CPV362M4UPBF	VISHAY	获取价格	Insulated Gate Bipolar Transistor,
VS-CPV363M4UPBF	VISHAY	获取价格	Insulated Gate Bipolar Transistor,
VSCQ20	CUI	获取价格	DC/DC converter
VSCQ20-Q24-D12	CUI	获取价格	DC/DC converter
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VSCQ20-Q24-S3R3	CUI	获取价格	DC/DC converter
VSCQ20-Q24-S5	CUI	获取价格	DC/DC converter
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