Datasheet > VS-CPV362M4UPBF

VS-CPV362M4UPBF

更新时间： 2024-11-27 20:07:15

品牌	Logo	应用领域
威世 - VISHAY		栅
页数	文件大小	规格书
11页	264K
描述
Insulated Gate Bipolar Transistor,

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VS-CPV362M4UPBF 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.66	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

VS-CPV362M4UPBF 数据手册

CPV362M4UPbF

Vishay Semiconductors

www.vishay.com

IGBT SIP Module

(Fast IGBT)

FEATURES

• Fully isolated printed circuit board mount package

• Switching-loss rating includes all “tail” losses

• HEXFRED^®soft ultrafast diodes

RoHS

COMPLIANT

• Optimized for high speed over 5 kHz

See fig. 1 for current vs. frequency curve

• UL approved file E78996

IMS-2

• Designed and qualified for industrial level

PRODUCT SUMMARY

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE

I_RMSper phase (3.1 kW total)

4.6 A_RMS

with T_C= 90 °C

DESCRIPTION

T_J

125 °C

360 Vdc

0.8

The IGBT technology is the key to Vishay´s Semiconductors

advanced line of IMS (Insulated Metal Substrate) power

modules. These modules are more efficient than

comparable bipolar transistor modules, while at the same

time having the simpler gate-drive requirements of the

familiar power MOSFET. This superior technology has now

been coupled to a state of the art materials system that

maximizes power throughput with low thermal resistance.

This package is highly suited to motor drive applications and

where space is at a premium.

Supply voltage

Power factor

Modulation depth (see fig. 1)

115 %

V_CE(on)(typical)

at I_C= 3.9 A, 25 °C

1.7 V

Package

Circuit

SIP

Three Phase Inverter

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

MAX.

600

7.2

UNITS

Collector to emitter voltage

V_CES

T_C= 25 °C

Continuous collector current, each IGBT

I_C

T_C= 100 °C

3.9

(1)

Pulsed collector current

I_CM

(2)

Clamped inductive load current

Diode continuous forward current

Diode maximum forward current

Gate to emitter voltage

I_LM

I_F

3.4

I_FM

V_GE

V_ISOL

2500

Isolation voltage

1 minute, any terminal to case

T_C= 25 °C

V_RMS

Maximum power dissipation, each IGBT

P_D

_C= 100 °C

9.1

Operating junction and storage temperature range

Soldering temperature

T_J, T_Stg

- 40 to + 150

300

°C

10 s, (0.063" (1.6 mm) from case)

6-32 or M3 screw

5 to 7

(0.55 to 0.8)

lbf · in

(N · m)

Mounting torque

Notes

(1)

Repetitive rating; V_GE= 20 V, pulse width limited by maximum junction temperature (see fig. 20)

V_CC= 80 % (V_GES), V_GE= 20 V, L = 10 μH, R_G= 50  (see fig.19)

(2)

Revision: 11-Jun-13

Document Number: 94483

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...11

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与VS-CPV362M4UPBF相关器件

型号	品牌	获取价格	描述	数据表
VS-CPV363M4UPBF	VISHAY	获取价格	Insulated Gate Bipolar Transistor,
VSCQ20	CUI	获取价格	DC/DC converter
VSCQ20-Q24-D12	CUI	获取价格	DC/DC converter
VSCQ20-Q24-D15	CUI	获取价格	DC/DC converter
VSCQ20-Q24-D5	CUI	获取价格	DC/DC converter
VSCQ20-Q24-S12	CUI	获取价格	DC/DC converter
VSCQ20-Q24-S3R3	CUI	获取价格	DC/DC converter
VSCQ20-Q24-S5	CUI	获取价格	DC/DC converter
VSCQ20-Q48-D12	CUI	获取价格	DC/DC converter
VSCQ20-Q48-D15	CUI	获取价格	DC/DC converter

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