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VS-85CNQ015A PDF预览

VS-85CNQ015A

更新时间: 2024-01-24 19:43:31
品牌 Logo 应用领域
威世 - VISHAY 整流二极管局域网高功率电源
页数 文件大小 规格书
9页 167K
描述
Schottky Rectifier New Generation 3 D-61 Package, 2 x 40 A

VS-85CNQ015A 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:R-PSIP-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.24
其他特性:HIGH RELIABILITY应用:HIGH POWER
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.32 VJESD-30 代码:R-PSIP-T3
最大非重复峰值正向电流:5200 A元件数量:2
相数:1端子数量:3
最高工作温度:125 °C最低工作温度:-55 °C
最大输出电流:80 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:25 V子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

VS-85CNQ015A 数据手册

 浏览型号VS-85CNQ015A的Datasheet PDF文件第2页浏览型号VS-85CNQ015A的Datasheet PDF文件第3页浏览型号VS-85CNQ015A的Datasheet PDF文件第4页浏览型号VS-85CNQ015A的Datasheet PDF文件第5页浏览型号VS-85CNQ015A的Datasheet PDF文件第6页浏览型号VS-85CNQ015A的Datasheet PDF文件第7页 
VS-85CNQ015A PbF Series  
Vishay High Power Products  
Schottky Rectifier  
New Generation 3 D-61 Package, 2 x 40 A  
FEATURES  
VS-85CNQ015APbF  
Base  
common  
• 125 °C TJ operation (VR < 5 V)  
cathode  
• Center tap module  
• Optimized for OR-ing applications  
1
2
3
Anode  
2
• Ultra low forward voltage drop  
• High frequency operation  
Anode  
1
Common  
cathode  
D-61-8  
• Guard ring for enhanced ruggedness and long term  
reliability  
VS-85CNQ015ASMPbF  
• High purity, high temperature epoxy encapsulation for  
enhanced mechanical strength and moisture resistance  
1
2
3
Anode  
2
• New fully transfer-mold low profile, small footprint, high  
current package  
Anode  
1
Common  
cathode  
D-61-8-SM  
• Through-hole versions are currently available for use in  
lead (Pb)-free applications (“PbF” suffix)  
VS-85CNQ015ASLPbF  
Base  
common  
cathode  
• Compliant to RoHS directive 2002/95/EC  
• Designed and qualified for industrial level  
DESCRIPTION  
1
3
Anode  
2
Anode  
1
The center tap Schottky rectifier module has been optimized  
for ultra low forward voltage drop specifically for the OR-ing  
of parallel power supplies. The proprietary barrier  
technology allows for reliable operation up to 125 °C  
junction temperature. Typical applications are in parallel  
switching power supplies, converters, reverse battery  
protection, and redundant power subsystems.  
D-61-8-SL  
PRODUCT SUMMARY  
IF(AV)  
2 x 40 A  
15 V  
VR  
IRM  
1000 mA at 100 °C  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
80  
UNITS  
Rectangular waveform  
A
V
15  
tp = 5 μs sine  
5200  
A
VF  
40 Apk, TJ = 75 °C (per leg)  
Range  
0.32  
V
TJ  
- 55 to 125  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VR  
VS-85CNQ015APbF  
UNITS  
Maximum DC reverse voltage  
15  
25  
V
Maximum working peak reverse voltage  
VRWM  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 94260  
Revision: 16-Apr-10  
For technical questions, contact: diodestech@vishay.com  
www.vishay.com  
1

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