Datasheet > VS-6FLR100S05

VS-6FLR100S05

更新时间： 2022-09-29 18:50:50

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
11页	182K
描述
DIODE GEN PURP 1KV 6A DO203AA

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数据手册

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VS-6FLR100S05 数据手册

VS-6FL(R), VS-12FL(R), VS-16FL(R) Series

www.vishay.com

Vishay Semiconductors

R_thJCCONDUCTION

6FL..

12FL..

16FL..

6FL..

12FL..

16FL..

CONDUCTION ANGLE

TEST CONDITIONS

UNITS

SINUSOIDAL CONDUCTION

RECTANGULAR CONDUCTION

180°

120°

60°

0.58

0.60

1.28

2.20

0.46

0.48

1.02

1.76

0.37

0.39

0.82

1.41

0.33

0.58

1.28

2.20

0.26

0.46

1.02

1.76

0.21

0.37

0.82

1.41

T_J= 150 °C

K/W

30°

Note

The table above shows the increment of thermal resistance R_thJCwhen devices operate at different conduction angles than DC

•

160

150

140

130

120

110

100

160

150

140

130

120

110

100

180 °C

120 °C

60 °C

180 °C

120 °C

60 °C

Average Forward Current (A)

Fig. 1 - Average Forward Current vs.

Maximum Allowable Case Temperature, 6FL Series

Fig. 3 - Average Forward Current vs.

Maximum Allowable Case Temperature, 16FL Series

160

I_F

dI_F

150

140

130

120

110

100

I_FM

t_rr

%I_RM(REC)

180 °C

Q_rr

180 °C

120 °C

60 °C

I_RM(REC)

I_F, I_FM- Peak forward current prior to commutation

-dI_F/dt - Rate of fall of forward current

_RM(REC)- Peak reverse recovery current

10 12 14 16 18 20

t_rr- Reverse recovery time

Q_rr- Reverse recovered charge

Average Forward Current (A)

Fig. 2 - Average Forward Current vs.

Maximum Allowable Case Temperature, 12FL Series

Fig. 4 - Reverse Recovery Time Test Waveform

Revision: 11-Jan-18

Document Number: 93138

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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