Datasheet > VS-6FLR100S05

VS-6FLR100S05

更新时间： 2022-09-29 18:50:50

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页数	文件大小	规格书
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描述
DIODE GEN PURP 1KV 6A DO203AA

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VS-6FLR100S05 数据手册

VS-6FL(R), VS-12FL(R), VS-16FL(R) Series

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Vishay Semiconductors

FORWARD CONDUCTION

PARAMETER

SYMBOL

TEST CONDITIONS

6FL..

12FL..

12 ⁽¹⁾

100

16FL..

UNITS

Maximum average forward current 

at case temperature

180° conduction, half sine wave

I_F(AV)

100

9.5

130

135

110

115

100

°C

Maximum RMS current

I_F(RMS)

t = 10 ms

t = 8.3 ms

t = 10 ms

t = 8.3 ms

t = 10 ms

t = 8.3 ms

t = 10 ms

t = 8.3 ms

170

215

225

180

190

230

210

160

150

2290

1.4

No voltage

reapplied

180

Maximum peak, one-cycle 

non-repetitive forward current

I_FSM

145

150 ⁽¹⁾

100 % V_RRM

reapplied



Sinusoidal

half wave,

initial

145

No voltage

reapplied

T_J= 150 °C

130

Maximum I²t for fusing

I²t

A²s

103

100 % V_RRM

reapplied

Maximum I²t for fusing

I²t

t = 0.1 ms to 10 ms, no voltage reapplied

T_J= 25 °C; I_F= Rated I_F(AV)(DC)

T_C= 100 °C; I_FM=  x rated I_F(AV)

856

1.4

1.5

1452

1.4 ⁽¹⁾

1.5 ⁽¹⁾

A²s

Maximum forward voltage drop

V_FM

1.5

Note

(1)

JEDEC^®registered values

RECOVERY CHARACTERISTICS

6FL..,

12FL..,

16FL..

PARAMETER SYMBOL TEST CONDITIONS

UNITS

S02 S05 S10 S02 S05 S10 S02 S05 S10

T_J= 25 °C,

I_F= 1 A to V_R= 30 V, 110 285 490 100 250 430

dI_F/dt = 100 A/μs

90 225 390

Maximum

reverse

recovery time

t_rr

T_J= 25 °C, 

I_FM

dI_F/dt = 25 A/μs,

200 500 1000 200 500 1000 200 500 1000

t_rr

_FM=  x rated I_F(AV)

Maximum

dir

Q_rr

I_RM(REC)

peak recovery I_RM(REC)I_FM=  x rated I_F(AV)

current

T_J= 25 °C, 

I_F= 1 A to V_R= 30 V, 230 1700 5000 200 1300 3800 150 1100 3000

dI_F/dt = 100 A/μs

Maximum

reverse

recovery

charge

Q_rr

T_J= 25 °C, 

dI_F/dt = 25 A/μs,

_FM=  x rated I_F(AV)

200 1200 5000 200 1200 5000 200 1200 5000

Note

(1)

JEDEC^®registered values

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

6FL.. 12FL.. 16FL.. UNITS

Maximum junction operating temperature range

Maximum storage temperature range

Maximum thermal resistance, junction to case

Maximum thermal resistance, case to heatsink

T_J

-65 to +150

°C

T_Stg

-65 to +175

R_thJC

R_thCS

DC operation

2.5

2.0

0.5

1.6

°C/W

Mounting surface, smooth, flat, and greased

1.5 ^{+ 0 - 10 %}

(13)

1.2 ^{+ 0 - 10 %}

(10)

Not lubricated threads

N · m

(lbf · in)

Allowable mounting torque

Lubricated threads

Approximate weight

Case style

0.25

oz.

JEDEC^®

DO-4 (DO-203AA)

Revision: 11-Jan-18

Document Number: 93138

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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