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VS-6CWH02FN-M3

更新时间： 2024-11-11 12:22:47
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
8页 148K
描述
Ultrafast Rectifier, 2 x 3 A FRED Pt®

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VS-6CWH02FN-M3  
Vishay Semiconductors  
Ultrafast Rectifier, 2 x 3 A FRED Pt®  
FEATURES  
• Ultrafast recovery time  
Base  
common  
cathode  
4
• Low forward voltage drop  
• Low leakage current  
• 175 °C operating junction temperature  
• Compliant to RoHS Directive 2002/95/EC  
2
Common  
cathode  
• Halogen-free according to IEC 61249-2-21  
definition  
D-PAK (TO-252AA)  
1
3
Anode  
Anode  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
DESCRIPTION/APPLICATIONS  
Vishay Semiconductors’ 200 V series are the state of the art  
hyperfast recovery rectifiers specifically designed with  
optimized performance of forward voltage drop and  
hyperfast recovery time.  
PRODUCT SUMMARY  
Package  
D-PAK (TO-252AA)  
2 x 3 A  
IF(AV)  
The planar structure and the platinum doped life time  
control, guarantee the best overall performance,  
ruggedness and reliability characteristics.  
VR  
200 V  
VF at IF  
1.0 V  
These devices are intended for use in the output  
rectification stage of SMPS, UPS, DC/DC converters as well  
as freewheeling diode in low voltage inverters and chopper  
motor drives.  
t
rr typ.  
See Recovery table  
175 °C  
TJ max.  
Diode variation  
Common cathode  
Their extremely optimized stored charge and low recovery  
current minimize the switching losses and reduce over  
dissipation in the switching element and snubbers.  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VRRM  
IF(AV)  
TEST CONDITIONS  
MAX.  
UNITS  
Peak repetitive reverse voltage  
200  
V
Average rectified forward current per device  
Non-repetitive peak surge current  
Peak repetitive forward current per diode  
Operating junction and storage temperatures  
Total device, rated VR, TC = 159 °C  
Rated VR , square wave, 20 kHz, TC = 159 °C  
6
IFSM  
50  
6
A
IFM  
TJ, TStg  
- 65 to 175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 μA  
IF = 3 A  
200  
-
-
-
-
-
-
-
-
-
-
-
-
1
0.9  
1.2  
1.08  
5
V
IF = 3 A, TJ = 125 °C  
IF = 6 A  
Forward voltage  
VF  
-
IF = 6 A, TJ = 125 °C  
VR = VR rated  
-
-
Reverse leakage current  
IR  
μA  
TJ = 125 °C, VR = VR rated  
VR = 200 V  
-
100  
-
Junction capacitance  
Series inductance  
CT  
LS  
12  
8.0  
pF  
Measured lead to lead 5 mm from package body  
-
nH  
Document Number: 93498  
Revision: 31-Mar-11  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
12345678

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VS-6CWH02FN-M3 替代型号

型号 品牌 替代类型 描述 数据表
VS-6CWH02FNTR-M3 VISHAY

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