是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | TO-48 |
包装说明: | POST/STUD MOUNT, O-MUPM-D2 | 针数: | 2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
Factory Lead Time: | 18 weeks | 风险等级: | 5.75 |
其他特性: | HIGH RELIABILITY | 配置: | SINGLE |
最大直流栅极触发电流: | 40 mA | JEDEC-95代码: | TO-208AA |
JESD-30 代码: | O-MUPM-D2 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 125 °C |
最低工作温度: | -40 °C | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | POST/STUD MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 最大均方根通态电流: | 35 A |
断态重复峰值电压: | 800 V | 重复峰值反向电压: | 800 V |
表面贴装: | NO | 端子形式: | SOLDER LUG |
端子位置: | UPPER | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
触发设备类型: | SCR | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
VS-2N5206 | VISHAY |
获取价格 |
Silicon Controlled Rectifier, 35A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-208AA | |
VS-2N5207 | VISHAY |
获取价格 |
Silicon Controlled Rectifier, 35A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-208AA | |
VS-2N681 | VISHAY |
获取价格 |
Silicon Controlled Rectifier, 25A I(T)RMS, 25V V(DRM), 25V V(RRM), 1 Element, TO-208AA, TO | |
VS-2N682 | VISHAY |
获取价格 |
Silicon Controlled Rectifier, 25A I(T)RMS, 50V V(DRM), 50V V(RRM), 1 Element, TO-208AA, TO | |
VS-2N683 | VISHAY |
获取价格 |
Phase Control Thyristor RMS SCRs, 25 A, 35 A | |
VS-2N684 | VISHAY |
获取价格 |
Silicon Controlled Rectifier, | |
VS-2N685 | VISHAY |
获取价格 |
Phase Control Thyristor RMS SCRs, 25 A, 35 A | |
VS-2N687 | VISHAY |
获取价格 |
Phase Control Thyristor RMS SCRs, 25 A, 35 A | |
VS-2N688 | VISHAY |
获取价格 |
Silicon Controlled Rectifier, 25A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-208AA, | |
VS-2N689 | VISHAY |
获取价格 |
Silicon Controlled Rectifier, 25A I(T)RMS, 500V V(DRM), 500V V(RRM), 1 Element, TO-208AA, |