VS-18TQ0..HN3 Series
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Vishay Semiconductors
High Performance Schottky Rectifier, 18 A
FEATURES
Base
cathode
2
• 175 °C TJ operation
• Low forward voltage drop
• High frequency operation
• High
purity,
high
temperature
epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
1
3
TO-220AC
Cathode Anode
• Guard ring for enhanced ruggedness and long
term reliability
• AEC-Q101 qualified meets JESD 201 class 2 whisker test
PRODUCT SUMMARY
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
IF(AV)
18 A
35 V to 45 V
0.53 V
VR
VF at IF
DESCRIPTION
I
RM max.
25 mA at 125 °C
175 °C
The VS-18TQ... Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
TJ max.
EAS
24 mJ
Package
TO-220AC
Single die
Diode variation
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
VRRM
IFSM
CHARACTERISTICS
VALUES
18
UNITS
Rectangular waveform
Range
A
V
35 to 45
1800
tp = 5 μs sine
18 Apk, TJ = 125 °C
Range
A
VF
0.53
V
TJ
-55 to 175
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
VS-18TQ035HN3
35
VS-18TQ040HN3
VS-18TQ045HN3
UNITS
Maximum DC reverse voltage
VR
40
45
V
Maximum working peak reverse
voltage
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
50 % duty cycle at TC = 149 °C, rectangular waveform
VALUES
UNITS
Maximum average forward current
See fig. 5
IF(AV)
18
A
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
1800
Maximum peak one cycle
non-repetitive surge current
See fig. 7
Following any rated load
condition and with rated
VRRM applied
IFSM
390
24
Non-repetitive avalanche energy
Repetitive avalanche current
EAS
IAR
TJ = 25 °C, IAS = 3.6 A, L = 3.7 mH
mJ
A
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
3.6
Revision: 05-Mar-14
Document Number: 94958
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000