5秒后页面跳转
VS-18TQ0PBF PDF预览

VS-18TQ0PBF

更新时间: 2024-01-18 18:29:02
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 179K
描述
Schottky Rectifier, 18 A

VS-18TQ0PBF 数据手册

 浏览型号VS-18TQ0PBF的Datasheet PDF文件第2页浏览型号VS-18TQ0PBF的Datasheet PDF文件第3页浏览型号VS-18TQ0PBF的Datasheet PDF文件第4页浏览型号VS-18TQ0PBF的Datasheet PDF文件第5页浏览型号VS-18TQ0PBF的Datasheet PDF文件第6页浏览型号VS-18TQ0PBF的Datasheet PDF文件第7页 
VS-18TQ0..PbF Series, VS-18TQ0..-N3 Series  
www.vishay.com  
Vishay Semiconductors  
Schottky Rectifier, 18 A  
FEATURES  
Base  
• 175 °C TJ operation  
cathode  
2
• Low forward voltage drop  
• High frequency operation  
• High  
purity,  
high  
temperature  
epoxy  
encapsulation for enhanced mechanical strength  
and moisture resistance  
1
3
Cathode Anode  
TO-220AC  
• Guard ring for enhanced ruggedness and long  
term reliability  
• Designed and qualified according to JEDEC-JESD47  
PRODUCT SUMMARY  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
Package  
TO-220AC  
18 A  
IF(AV)  
VR  
35 V, 40 V, 45 V  
0.53 V  
DESCRIPTION  
VF at IF  
The VS-18TQ... Schottky rectifier series has been optimized  
for low reverse leakage at high temperature. The proprietary  
barrier technology allows for reliable operation up to 175 °C  
junction temperature. Typical applications are in switching  
power supplies, converters, freewheeling diodes, and  
reverse battery protection.  
I
RM max.  
25 mA at 125 °C  
175 °C  
TJ max.  
Diode variation  
EAS  
Single die  
24 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
18  
UNITS  
Rectangular waveform  
Range  
A
V
35 to 45  
1800  
tp = 5 μs sine  
18 Apk, TJ = 125 °C  
Range  
A
VF  
0.53  
V
TJ  
- 55 to 175  
°C  
VOLTAGE RATINGS  
PARAMETER  
VS-18TQ035PbF  
VS-18TQ035-N3  
VS-18TQ040PbF  
VS-18TQ040-N3  
VS-18TQ045PbF  
VS-18TQ045-N3  
SYMBOL  
VR  
UNITS  
Maximum DC reverse voltage  
35  
40  
45  
V
Maximum working peak reverse  
voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
50 % duty cycle at TC = 149 °C, rectangular waveform  
VALUES  
UNITS  
Maximum average forward current  
See fig. 5  
IF(AV)  
18  
A
Maximum peak one cycle  
non-repetitive surge current  
See fig. 7  
Following any rated load  
condition and with rated  
5 μs sine or 3 μs rect. pulse  
10 ms sine or 6 ms rect. pulse  
1800  
IFSM  
390  
24  
VRRM applied  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
TJ = 25 °C, IAS = 3.6 A, L = 3.7 mH  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
3.6  
Revision: 11-Oct-12  
Document Number: 94149  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

与VS-18TQ0PBF相关器件

型号 品牌 获取价格 描述 数据表
VS18VUA1LAM ROHM

获取价格

Transient Voltage Suppressor
VS18VUA1LAMTF ROHM

获取价格

VS5V0UA1LAMTF是适合浪涌保护用途的小型模件封装的TVS二极管。是车载级的高可靠
VS18VUA1VWM ROHM

获取价格

VS18VUA1VWM是一款用于浪涌保护、电压控制和电压限制的TVS二极管。该产品用更小型
VS18VUA1VWMTF ROHM

获取价格

VS18VUA1VWMTF是一款用于浪涌保护、电压控制和电压限制的TVS二极管。是符合AE
VS19 ETC

获取价格

Interface IC
VS19510100J0G AMPHENOL

获取价格

Barrier Strip Terminal Block
VS19515100J0G AMPHENOL

获取价格

Barrier Strip Terminal Block
VS19516100J0G AMPHENOL

获取价格

Barrier Strip Terminal Block
VS1951C000J0G AMPHENOL

获取价格

Barrier Strip Terminal Block
VS1951C100J0G AMPHENOL

获取价格

Barrier Strip Terminal Block