Datasheet > VS-19TQ015SPBF

VS-19TQ015SPBF

更新时间： 2024-09-30 21:13:23

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	147K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 19A, 15V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, D2PAK-3

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VS-19TQ015SPBF 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	零件包装代码：	TO-263
包装说明：	R-PSSO-G2	针数：	3
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.5	Base Number Matches：	1

VS-19TQ015SPBF 数据手册

VS-19TQ015SPbF

Vishay Semiconductors

www.vishay.com

High Performance Schottky Rectifier, 19 A

FEATURES

• 125 °C T_Joperation (V_R< 5 V)

• Optimized for OR-ing applications

• Ultralow forward voltage drop

• High frequency operation

Base

cathode

• Guard ring for enhanced ruggedness and long

term reliability

• High purity, high temperature epoxy

encapsulation for enhanced mechanical

strength and moisture resistance

D²PAK

N/C

Anode

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

PRODUCT SUMMARY

Package

D²PAK

19 A

• AEC-Q101 qualified

I_F(AV)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

V_R

15 V

V_Fat I_F

0.36 V

DESCRIPTION

_RMmax.

522 mA at 100 °C

125 °C

The VS-19TQ015SPbF Schottky rectifier has been

optimized for ultralow forward voltage drop specifically for

the OR-ing of parallel power supplies. The proprietary

barrier technology allows for reliable operation up to 125 °C

junction temperature. Typical applications are in parallel

switching power supplies, converters, reverse battery

protection, and redundant power subsystems.

T_Jmax.

Diode variation

E_AS

Single die

6.75 mJ

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

I_F(AV)

V_RRM

I_FSM

CHARACTERISTICS

VALUES

UNITS

Rectangular waveform

t_p= 5 μs sine

19 A_pk, T_J= 75 °C

Range

700

V_F

0.32

T_J

-55 to +125

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL

VS-19TQ015SPbF

UNITS

Maximum DC reverse voltage

Maximum working peak reverse voltage

V_R

V_RWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

50 % duty cycle at T_C= 80 °C, rectangular waveform

VALUES

UNITS

Maximum average forward current

See fig. 5

I_F(AV)

5 μs sine or 3 μs rect. pulse

700

Maximum peak one cycle

non-repetitive surge current

See fig. 7

Following any rated

load condition and with

rated V_RRMapplied

I_FSM

10 ms sine or 6 ms rect. pulse

330

Non-repetitive avalanche energy

Repetitive avalanche current

E_AS

I_AR

T_J= 25 °C, I_AS= 1.50 A, L = 6 mH

6.75

Current decaying linearly to zero in 1 μs

Frequency limited by T_Jmaximum V_A= 3 x V_Rtypical

1.50

Revision: 28-May-14

Document Number: 94152

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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