Datasheet > VS-19TQ015-M3

VS-19TQ015-M3

更新时间： 2023-12-06 20:09:47

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	169K
描述
High Performance Schottky Rectifier, 19 A

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VS-19TQ015-M3 数据手册

VS-19TQ015-M3

Vishay Semiconductors

www.vishay.com

High Performance Schottky Rectifier, 19 A

FEATURES

• 125 °C T_Joperation (V_R< 5 V)

• Optimized for OR-ing applications

• Ultralow forward voltage drop

• High frequency operation

Base cathode

• Guard ring for enhanced ruggedness and long term

reliability

Anode

Cathode

• High purity, high temperature epoxy encapsulation for

enhanced mechanical strength and moisture resistance

TO-220AC 2L

• Designed and qualified according to JEDEC^®-JESD 47

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

PRIMARY CHARACTERISTICS

I_F(AV)

19 A

15 V

V_R

DESCRIPTION

V_Fat I_F

0.32 V

The VS-19TQ015... Schottky rectifier has been optimized for

ultralow forward voltage drop specifically for the OR-ing of

parallel power supplies. The proprietary barrier technology

allows for reliable operation up to 125 °C junction

temperature. Typical applications are in parallel switching

power supplies, converters, reverse battery protection, and

redundant power subsystems.

I_RMmax.

T_Jmax.

522 mA at 100 °C

125 °C

E_AS

6.75 mJ

Package

TO-220AC 2L

Single

Circuit configuration

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

CHARACTERISTICS

VALUES

UNITS

I_F(AV)

V_RRM

I_FSM

V_F

Rectangular waveform

t_p= 5 μs sine

19 A_pk, T_J= 75 °C

Range

700

0.32

T_J

-55 to +125

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL

V_R

VS-19TQ015-M3

UNITS

Maximum DC reverse voltage

Maximum working peak reverse voltage

V_RWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum average forward current

See fig. 5

I_F(AV)

50 % duty cycle at T_C= 80 °C, rectangular waveform

5 μs sine or 3 μs rect. pulse

10 ms sine or 6 ms rect. pulse

700

Maximum peak one cycle

non-repetitive surge current

See fig. 7

Following any rated load

condition and with rated

I_FSM

V_RRMapplied

330

Non-repetitive avalanche energy

Repetitive avalanche current

E_AS

I_AR

T_J= 25 °C, I_AS= 1.50 A, L = 6 mH

6.75

Current decaying linearly to zero in 1 μs

Frequency limited by T_Jmaximum V_A= 3 x V_Rtypical

1.50

Revision: 22-Dec-2021

Document Number: 94151

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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与VS-19TQ015-M3相关器件

型号	品牌	获取价格	描述	数据表
VS-19TQ015-N3	VISHAY	获取价格	Schottky Rectifier,
VS-19TQ015PBF	VISHAY	获取价格	Optimized for OR-ing applications
VS-19TQ015PBF_15	VISHAY	获取价格	Schottky Rectifier,
VS-19TQ015S-M3	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 15V V(RRM), Silicon, TO-263AB, D2PAK-3/2
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VS-19TQ015STRL-M3	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 15V V(RRM), Silicon, TO-263AB, D2PAK-3/2
VS-19TQ015STRLPBF	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 19A, 15V V(RRM), Silicon, HALOGEN FREE AND
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