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VS-100BGQ015 PDF预览

VS-100BGQ015

更新时间: 2024-09-27 14:55:31
品牌 Logo 应用领域
威世 - VISHAY 局域网二极管
页数 文件大小 规格书
7页 142K
描述
High Performance Schottky Rectifier, 100 A

VS-100BGQ015 技术参数

生命周期:Active包装说明:R-PSFM-X1
针数:1Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.71其他特性:HIGH RELIABILITY
应用:GENERAL PURPOSE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.31 VJESD-30 代码:R-PSFM-X1
最大非重复峰值正向电流:5000 A元件数量:1
相数:1端子数量:1
最高工作温度:125 °C最低工作温度:-55 °C
最大输出电流:100 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:15 V子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子形式:UNSPECIFIED端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

VS-100BGQ015 数据手册

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VS-100BGQ015  
Vishay Semiconductors  
www.vishay.com  
High Performance Schottky Rectifier, 100 A  
FEATURES  
• Ultralow forward voltage drop  
• Optimized for OR-ing applications  
• Guard ring for enhanced ruggedness and  
long term reliability  
Cathode  
Anode  
• Screw mounting only  
• Designed and qualified according to  
JEDEC®-JESD47  
• 125 °C max. operating junction temperature (VR < 5 V)  
• High frequency operation  
PowerTab®  
• Continuous high current operation  
• PowerTab® package  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRODUCT SUMMARY  
Package  
PowerTab®  
IF(AV)  
100 A  
15 V  
VR  
DESCRIPTION  
VF at IF  
IRM  
0.45 V  
The VS-100BGQ015 Schottky rectifier has been optimized  
for ultralow forward voltage drop specifically for the OR-ing  
of parallel power supplies. The proprietary barrier  
technology allows for reliable operation up to 125 °C  
junction temperature. Typical applications are in parallel  
switching power supplies, converters, reverse battery  
protection, and redundant power subsystems.  
870 mA at 100 °C  
125 °C  
TJ max.  
Diode variation  
EAS  
Single die  
9 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
CHARACTERISTICS  
Rectangular waveform  
TC  
VALUES  
100  
UNITS  
A
°C  
V
IF(AV)  
88  
VRRM  
IFSM  
15  
tp = 5 μs sine  
100 Apk (typical)  
TJ  
5000  
0.39  
A
V
VF  
TJ  
125  
°C  
°C  
Range  
-55 to +125  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VS-100BGQ015  
UNITS  
TJ = 100 °C  
TJ = 125 °C  
15  
5
Maximum DC reverse voltage  
VR  
V
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
50 % duty cycle at TC = 88 °C, rectangular waveform  
VALUES  
UNITS  
Maximum average forward current  
IF(AV)  
100  
A
Following any rated load  
condition and with rated  
5 μs sine or 3 μs rect. pulse  
5000  
Maximum peak one cycle  
non-repetitive surge current  
IFSM  
A
10 ms sine or 6 ms rect. pulse  
TJ = 25 °C, IAS = 2 A, L = 4.5 mH  
1000  
9
VRRM applied  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 3 x VR typical  
2
Revision: 12-Jun-15  
Document Number: 94578  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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