VS-100BGQ015HF4
Vishay Semiconductors
www.vishay.com
High Performance Schottky Rectifier, 100 A
FEATURES
• Ultralow forward voltage drop
• Optimized for OR-ing applications
• Guard ring for enhanced ruggedness and
long term reliability
Cathode
Anode
• Screw mounting only
• AEC-Q101 qualified
• 125 °C max. operating junction temperature
(VR < 5 V)
PowerTab®
• High frequency operation
• Continuous high current operation
• PowerTab® package
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
Package
PowerTab®
IF(AV)
100 A
15 V
VR
DESCRIPTION
VF at IF
IRM
0.45 V
The VS-100BGQ015HF4 Schottky rectifier has been
optimized for ultralow forward voltage drop specifically for
the OR-ing of parallel power supplies. The proprietary
barrier technology allows for reliable operation up to 125 °C
junction temperature. Typical applications are in parallel
switching power supplies, converters, reverse battery
protection, and redundant power subsystems.
870 mA at 100 °C
125 °C
TJ max.
Diode variation
EAS
Single die
9 mJ
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
Rectangular waveform
TC
VALUES
100
UNITS
A
°C
V
IF(AV)
88
VRRM
IFSM
15
tp = 5 μs sine
100 Apk (typical)
TJ
5000
0.39
A
V
VF
TJ
125
°C
°C
Range
-55 to +125
VOLTAGE RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VS-100BGQ015HF4
UNITS
TJ = 100 °C
TJ = 125 °C
15
5
Maximum DC reverse voltage
VR
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
50 % duty cycle at TC = 88 °C, rectangular waveform
VALUES
UNITS
Maximum average forward current
IF(AV)
100
A
Following any rated load
condition and with rated
5 μs sine or 3 μs rect. pulse
5000
Maximum peak one cycle
non-repetitive surge current
IFSM
A
10 ms sine or 6 ms rect. pulse
TJ = 25 °C, IAS = 2 A, L = 4.5 mH
1000
9
VRRM applied
Non-repetitive avalanche energy
Repetitive avalanche current
EAS
IAR
mJ
A
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 3 x VR typical
2
Revision: 12-Jun-15
Document Number: 93801
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000