Datasheet > VR4J

VR4J

更新时间： 2024-11-30 22:15:27

品牌	Logo	应用领域
东芝 - TOSHIBA		二极管快恢复二极管
页数	文件大小	规格书
3页	120K
描述
TOSHIBA Fast Recovery Diode Silicon Diffused Type High Speed Rectifier Applications (fast recovery)

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中文翻译

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数据手册

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VR4J 数据手册

TVR4J,TVR4N

TOSHIBA Fast Recovery Diode Silicon Diffused Type

TVR4J,TVR4N

High Speed Rectifier Applications (fast recovery)

Unit: mm

Repetitive Peak Reverse Voltage: V

= 600, 1000 V

= 1.2 A (Ta = 55°C)

RRM

Average Forward Current: I

F (AV)

Reverse Recovery Time: t = 20 µs

Plastic Mold Type.

Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

TVR4J

TVR4N

600

1000

1.2

Repetitive peak

reverse voltage

RRM

Average forward current (Ta = 55°C )

F (AV)

Peak one cycle surge forward current

(non repetitive)

100 (50 Hz)

FSM

JEDEC

JEITA

―

Junction temperature

-40 to 150

°C

Storage temperature range

stg

TOSHIBA

3-4B1A

Weight: 0.47 g (typ.)

Electrical Characteristics (Ta = 25°C)

Characteristics

Peak forward voltage

Symbol

Test Condition

Min

Typ.

Max

Unit

= 5 A

1.2

Repetitive peak reverse current

Reverse recovery time

= Rated

RRM

= 20 mA, I = 1 mA

Thermal resistance (junction to ambient)

°C/W

th (j-a)

Note1: Soldering: 5 mm is the minimum to be kept between case and soldering part.

Note2: Lead bending: 5 mm is the minimum to be kept from the case when bend the lead wire.

Marking

Type Code Lot No.

Code

Type

VR4J

VR4N

TVR4J

TVR4N

Month (starting from alphabet A)

Year (last number of the christian era)

Cathode Mark

Color: Silver

2002-09-18

12 3

中文翻译

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