Datasheet > VP0109

VP0109

更新时间： 2023-12-06 20:10:38

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
5页	640K
描述
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-prove

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

VP0109 数据手册

VP0109

Typical Performance Curves

BV_DSSVariation with Temperature

On-Resistance vs. Drain Current

1.10

V_GS= -5.0V

1.06

1.02

0.98

0.94

0.90

V_GS= -10V

-0.3

-0.6

-0.9

-1.2

-1.5

-50

100

150

T_j(^OC)

I_D(amperes)

V_(th)and R_DSVariation with Temperature

Transfer Characteristics

-1.0

-0.8

-0.6

-0.4

-0.2

-1.6

T_A= -55^OC

-1.6

R_DS(ON)@ 10V, -0.5A

V_DS= -25V

T_A= 25^OC

-1.4

R_DS(ON)@ -5V, -0.1A

-1.4

-1.2

-1.0

-0.8

T_A= 125^OC

V_(th)@ -1.0mA

-0.8

0.6

-50

-2

-4

-6

-8

-10

100

150

V_GS(volts)

T_j(^OC)

Capacitance vs. Drain-to-Source Voltage

Gate Drive Dynamic Characteristics

-10

100

f = 1MHz

V_DS= -10V

70pf

-8

-6

-4

-2

V_DS= -40V

70pf

C_ISS

45pf

C_OSS

C_RSS

-10

-20

-30

-40

0.2

0.4

0.6

0.8

1.0

Q_G(nanocoulombs)

V_DS(volts)

Doc.# DSFP-VP0109

C082313

Supertex inc.

www.supertex.com

1 234 5

下载PDF

与VP0109相关器件

型号	品牌	描述	获取价格	数据表
VP0109_13	SUPERTEX	P-Channel Enhancement-Mode Vertical DMOS FETs	获取价格
VP0109N2	SUPERTEX	Small Signal Field-Effect Transistor, 0.45A I(D), 90V, 1-Element, P-Channel, Silicon, Meta	获取价格
VP0109N2	NJSEMI	P-Channel Enhancement-Mode	获取价格
VP0109N3	SUPERTEX	P-Channel Enhancement-Mode Vertical DMOS FETs	获取价格
VP0109N3	NJSEMI	P-Channel Enhancement-Mode	获取价格
VP0109N3-G	SUPERTEX	P-Channel Enhancement-Mode Vertical DMOS FETs	获取价格