Datasheet > VHB1-12T_07

VHB1-12T_07

更新时间： 2025-08-19 08:13:03

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
1页	18K
描述
NPN SILICON RF POWER TRANSISTOR

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VHB1-12T_07 数据手册

VHB1-12T

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The ASI VHB1-12T is Designed for

Class C, 12.5 V High Band Applications

up to 175 MHz.

PACKAGE STYLE TO-39

FEATURES:

• Class C Operation

Ø A

45°

• P_G= 10 dB at 1.0 W/175 MHz

• Omnigold™ Metalization System

Ø D

MAXIMUM RATINGS

400 mA ^(MAX)

40 V

I_C

V_CBO

V_CEO

V_CER

V_EBO

P_DISS

T_J

20 V

40 V

MINIMUM

inches / mm

MAXIMUM

inches / mm

DIM

2.0 V

.200 / 5.080

.029 / 0.740

.028 / 0.720

.335 / 8.510

.305 / 7.750

.240 / 6.100

.045 / 1.140

.034 / 0.860

.370 / 9.370

.335 / 8.500

.260 / 6.600

3.5 W @ T_C= 25 °C

-65 °C to +200 °C

20 °C/W

.500 / 12.700

T_STG

θ_JC

.016 / 0.407

.020 / 0.508

ORDER CODE: ASI10711

CHARACTERISTICS ^T_C= 25 °C

SYMBOL

BV_CEO

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 5.0 mA

I_E= 100 µA

BV_CER

BV_EBO

I_CEO

R_BE= 10 Ω

2.0

_CE= 12 V

_CE= 5.0 V

0.2

200

0.5

---

I_C= 100 mA

I_B= 20 mA

h_FE

I_C= 100 mA

V_CE(SAT)

Vdc

V_CB= 12.5 V

f = 1.0 MHz

f = 175 MHz

4.0

C_OB

P_G

V_CE= 12.5 V

P_OUT= 1.0 W

η_C

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. B

1/1

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

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