VHB1-28T_07 PDF预览

VHB1-28T_07

更新时间: 2025-08-19 12:20:03
品牌 Logo 应用领域
ASI 晶体晶体管射频
页数 文件大小 规格书
1页 18K
描述
NPN SILICON RF POWER TRANSISTOR

VHB1-28T_07 数据手册

  
VHB1-28T  
NPN SILICON RF POWER TRANSISTOR  
DESCRIPTION:  
The ASI VHB1-28T is Designed for  
Class C, 28 V High Band Applications  
up to 175 MHz.  
PACKAGE STYLE TO-39  
B
C
FEATURES:  
Ø A  
45°  
Class C Operation  
Ø D  
PG = 13 dB at 1.0 W/175 MHz  
Omnigold™ Metalization System  
E
F
MAXIMUM RATINGS  
H
G
0.4 A  
55 V  
IC  
VCBO  
VCEO  
VEBO  
PDISS  
TJ  
30 V  
MINIMUM  
inches / mm  
MAXIMUM  
inches / mm  
DIM  
3.5 V  
.200 / 5.080  
A
B
C
D
E
F
.029 / 0.740  
.028 / 0.720  
.335 / 8.510  
.305 / 7.750  
.240 / 6.100  
.045 / 1.140  
.034 / 0.860  
.370 / 9.370  
.335 / 8.500  
.260 / 6.600  
5 W @ TC = 25 °OC  
-65 °C to +200 °C  
-65 °C to +200 °C  
35 °C/W  
.500 / 12.700  
G
H
TSTG  
θJC  
.016 / 0.407  
.020 / 0.508  
ORDER CODE: ASI10720  
CHARACTERISTICS TC = 25 °C  
SYMBOL  
BVCEO  
BVCER  
BVCBO  
BVEBO  
ICEX  
NONETEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IC = 5.0 mA  
IC = 5.0 mA  
IC = 0.1 mA  
IE = 0.1 mA  
VC = 55 V  
30  
55  
55  
3.5  
V
V
RBE = 10 Ω  
V
V
VBE = -1.5 V  
IB = 20 mA  
100  
20  
µA  
µA  
V
VE = 28 V  
ICEO  
(S)  
IC = 100 mA  
VCE = 5.0 V  
1.0  
200  
VCE  
IC = 50 mA  
10  
5.0  
hFE  
---  
IC = 360 mA  
VCB = 28 V  
VCE = 28 V  
f = 1.0 MHz  
f = 175 MHz  
3.0  
COB  
pF  
13  
PG  
dB  
%
POUT = 1.0 W  
60  
ηC  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. B  
1/1  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004  
Specifications are subject to change without notice.  

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