New Product
VFT6045CBP
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
for PV Solar Cell Bypass Protection
Ultra Low VF = 0.33 V at IF = 10 A
FEATURES
TMBS®
ITO-220AB
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s, per
JESD 22-B106
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
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2
• Halogen-free according to IEC 61249-2-21 definition
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VFT6045CBP
PIN 1
PIN 2
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
PIN 3
MECHANICAL DATA
PRIMARY CHARACTERISTICS
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
IF(AV)
2 x 30 A
45 V
VRRM
Base P/N-M3
- halogen-free, RoHS compliant, and
commercial grade
IFSM
320 A
0.47 V
150 °C
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
VF at IF = 30 A
TOP max.
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VFT6045CBP
UNIT
Maximum repetitive peak reverse voltage
VRRM
45
60
30
V
per device
per diode
(1)
Maximum average forward rectified current (fig. 1)
IF(AV)
A
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
320
Isolation voltage from termal to heatsink, t = 1 min
Operating junction and storage temperature range
VAC
1500
V
TOP, TSTG
- 40 to + 150
°C
Junction temperature in DC forward current
without reverse bias, t ≤ 1 h
(2)
TJ
≤ 200
°C
Notes
(1)
With heatsink
(2)
Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test
Document Number: 89370
Revision: 03-Nov-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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