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VF40M120C-M3_15 PDF预览

VF40M120C-M3_15

更新时间： 2024-11-06 01:26:31
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 80K
描述
Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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VF40M120C-M3  
Vishay General Semiconductor  
www.vishay.com  
Dual High-Voltage Trench MOS Barrier Schottky Rectifier  
Ultra Low VF = 0.46 V at IF = 5 A  
FEATURES  
TMBS®  
ITO-220AB  
• Trench MOS Schottky technology  
• Low forward voltage drop, low power losses  
• High efficiency operation  
• Solder bath temperature 275 °C max. 10 s, per  
JESD 22-B106  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
3
2
1
VF40M120C  
TYPICAL APPLICATIONS  
PIN 1  
PIN 2  
For use in high frequency DC/DC converters, switching  
power supplies, freewheeling diodes, OR-ing diode, and  
reverse battery protection.  
PIN 3  
MECHANICAL DATA  
Case: ITO-220AB  
Molding compound meets UL 94 V-0 flammability rating  
PRIMARY CHARACTERISTICS  
IF(AV)  
2 x 20 A  
120 V  
VRRM  
Base P/N-M3  
-
halogen-free, RoHS-compliant, and  
IFSM  
250 A  
commercial grade  
VF at IF = 20 A  
TJ max.  
Package  
0.64 V  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
M3 suffix meets JESD 201 class 1A whisker test  
150 °C  
ITO-220AB  
Diode variation  
Dual common cathode  
Polarity: As marked  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
VF40M120C  
UNIT  
Maximum repetitive peak reverse voltage  
VRRM  
120  
40  
V
per device  
per diode  
Maximum average forward rectified current  
(fig. 1)  
IF(AV)  
20  
A
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
250  
Voltage rating of change (rated VR)  
dV/dt  
VAC  
10 000  
1500  
V/μs  
V
Isolation voltage from thermal to heatsink t = 1 min  
Operating junction and storage temperature range  
TJ, TSTG  
-40 to +150  
°C  
Revision: 02-Dec-13  
Document Number: 89471  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234

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