Datasheet > VBT2045C_15

VBT2045C_15

更新时间： 2024-11-10 01:24:51

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	90K
描述
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

VBT2045C_15 数据手册

New Product

VBT2045C

Vishay General Semiconductor

www.vishay.com

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.33 V at I_F= 5.0 A

FEATURES

TMBS^®

TO-263AB

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C

• Not recommended for PCB bottom side wave mounting

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

VBT2045C

PIN 1

PIN 2

TYPICAL APPLICATIONS

HEATSINK

For use in high frequency DC/DC converters, switching

power supplies, freewheeling diodes, OR-ing diode, and

reverse battery protection.

MECHANICAL DATA

PRIMARY CHARACTERISTICS

Case: TO-263AB

Molding compound meets UL 94 V-0 flammability rating

I_F(AV)

2 x 10 A

45 V

V_RRM

Base P/N-E3 - RoHS compliant, commercial grade

I_FSM

160 A

0.41 V

150 °C

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

V_Fat I_F= 10 A

T_Jmax.

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VBT2045C

UNIT

Maximum repetitive peak reverse voltage

V_RRM

per device

per diode

Maximum average forward rectified current

(fig. 1)

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

160

Operating junction and storage temperature range

T_J, T_STG

- 40 to + 150

°C

Revision: 26-Sep-11

Document Number: 89359

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

中文翻译

下载PDF

与VBT2045C_15相关器件

型号	品牌	获取价格	描述	数据表
VBT2045CBP	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
VBT2045CBP_1205	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier
VBT2045CBP_15	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier
VBT2045CBP-E3	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
VBT2045CBP-E3/4W	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 45V V(RRM), Silicon, TO-263AB,
VBT2045CBP-E3/8W	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 45V V(RRM), Silicon, TO-263AB,
VBT2045CBP-E3_15	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
VBT2045CBP-E3-4W	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
VBT2045CBP-E3-8W	VISHAY	获取价格	Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
VBT2045CBP-M3	VISHAY	获取价格	Trench MOS Schottky technology