Datasheet > VB30M120C-E3/4W

VB30M120C-E3/4W

更新时间： 2024-11-06 02:52:23

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	105K
描述
Dual High Voltage Trench MOS Barrier Schottky Rectifier

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VB30M120C-E3/4W 数据手册

VB30M120C

Vishay General Semiconductor

www.vishay.com

Dual High Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.52 V at I_F= 5 A

FEATURES

TMBS^®

D²PAK (TO-263AB)

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 245 °C

Available

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

VB30M120C

PIN 1

PIN 2

TYPICAL APPLICATIONS

HEATSINK

For use in solar cell junction box as a bypass diode for

protection, using DC forward current without reverse bias.

click logo to get started

DESIGN SUPPORT TOOLS

MECHANICAL DATA

Case: D²PAK (TO-263AB)

Models

Available

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

PRIMARY CHARACTERISTICS

Base P/N-M3

- halogen-free, RoHS-compliant, and

I_F(AV)

2 x 15 A

120 V

commercial grade

V_RRM

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 and M3 suffix meet JESD 201 class 2 whisker test

I_FSM

150 A

V_Fat I_F= 15 A

T_Jmax.

0.68 V

150 °C

Polarity: as marked

Package

D²PAK (TO-263AB)

Circuit configuration

Common cathode

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VB30M120C

UNIT

Maximum repetitive peak reverse voltage

V_RRM

120

per device

per diode

Maximum average forward rectified current (fig. 1)

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

I_FSM

150

Voltage rate of change (rated V_R)

dV/dt

10 000

V/μs

°C

Operating junction and storage temperature range

T_J, T_STG

-40 to +150

Revision: 20-Jun-2018

Document Number: 89467

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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