Datasheet > VB10150C-M3_15

VB10150C-M3_15

更新时间： 2024-01-05 01:58:37

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	78K
描述
High-Voltage Trench MOS Barrier Schottky Rectifier

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VB10150C-M3_15 数据手册

VB10150C-M3

Vishay General Semiconductor

www.vishay.com

High-Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.63 V at I_F= 3 A

FEATURES

• Trench MOS Schottky technology

TMBS^®

• Low forward voltage drop, low power losses

• High efficiency operation

TO-263AB

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C

• Material categorization:

For definitions of compliance please see

www.vishay.com/doc?99912

TYPICAL APPLICATIONS

VB10150C

PIN 1

PIN 2

For use in high frequency converters, switching power

supplies, freewheeling diodes, OR-ing diode, DC/DC

converters, and reverse battery protection.

HEATSINK

MECHANICAL DATA

Case: TO-263AB

Molding compound meets UL 94 V-0 flammability rating

PRIMARY CHARACTERISTICS

Package

TO-263AB

2 x 5.0 A

150 V

I_F(AV)

Base P/N-M3

- halogen-free, RoHS-compliant, and

V_RRM

commercial grade

I_FSM

60 A

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

V_Fat I_F= 10 A

T_Jmax.

0.69 V

150 °C

M3 suffix meets JESD 201 class 1A whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

Diode variations

Common cathode

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VB10150C

UNIT

Maximum repetitive peak reverse voltage

V_RRM

150

per device

Maximum average forward rectified current (fig. 1)

per diode

I_F(AV)

5.0

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

I_FSM

Voltage rate of change (rated V_R)

dV/dt

10 000

V/μs

°C

Operating junction and storage temperature range

T_J, T_STG

- 55 to + 150

ELECTRICAL CHARACTERISTICS (T_A= 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

TYP.

MIN.

UNIT

I_F= 3.0 A

0.82

0.99

0.63

0.69

0.5

T_A= 25 °C

I_F= 5.0 A

I_F= 3.0 A

I_F= 5.0 A

1.41

Instantaneous forward voltage

V_F

per diode ⁽¹⁾

T_A= 125 °C

0.75

T_A= 25 °C

T_A= 125 °C

T_A= 25 °C

T_A= 125 °C

μA

V_R= 100 V

V_R= 150 V

Reverse current per diode ⁽²⁾

I_R

100

Notes

(1)

Pulse test: 300 μs pulse width, 1 % duty cycle

Pulse test: Pulse width  40 ms

(2)

Revision: 30-Aug-13

Document Number: 87991

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与VB10150C-M3_15相关器件

型号	品牌	获取价格	描述	数据表
VB10150S	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A
VB10150S-E3/4W	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A
VB10150S-E3/8W	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A
VB10150S-M3	VISHAY	获取价格	Low forward voltage drop, low power losses
VB10150S-M3_15	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier
VB10170C	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VB10170C-E3	VISHAY	获取价格	Low forward voltage drop, low power losses
VB10170C-E3_15	VISHAY	获取价格	Dual High Voltage Trench MOS Barrier Schottky Rectifier
VB10170CHM3	VISHAY	获取价格	Low forward voltage drop, low power losses
VB10170C-M3	VISHAY	获取价格	Low forward voltage drop, low power losses

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