Datasheet > VB10170C-E3_15

VB10170C-E3_15

更新时间： 2024-11-21 01:26:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	85K
描述
Dual High Voltage Trench MOS Barrier Schottky Rectifier

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VB10170C-E3_15 数据手册

VB10170C-E3

Vishay General Semiconductor

www.vishay.com

Dual High Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.57 V at I_F= 2.5 A

FEATURES

TMBS^®

TO-263AB

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

VB10170C

TYPICAL APPLICATIONS

PIN 1

PIN 2

For use in high frequency DC/DC converters, switching

power supplies, freewheeling diodes, OR-ing diode, and

reverse battery protection.

HEATSINK

MECHANICAL DATA

Case: TO-263AB

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

PRIMARY CHARACTERISTICS

I_F(AV)

2 x 5 A

170 V

V_RRM

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

I_FSM

80 A

V_Fat I_F= 5.0 A

T_Jmax.

Package

0.65 V

175 °C

TO-263AB

Polarity: As marked

Mounting Torque: 10 in-lbs maximum



Diode variations

Common cathode

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VB10170C

UNIT

Maximum repetitive peak reverse voltage

V_RRM

170

per device

per diode

Maximum average forward rectified current

(fig. 1)

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

Voltage rate of change (rated V_R)

dV/dt

10 000

V/μs

°C

Operating junction and storage temperature range

T_J, T_STG

-40 to +175

Revision: 11-Sep-13

Document Number: 89948

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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