VB10170C-E3
Vishay General Semiconductor
www.vishay.com
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.57 V at IF = 2.5 A
FEATURES
TMBS®
TO-263AB
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
K
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
• Material categorization: For definitions of compliance
2
please see www.vishay.com/doc?99912
1
VB10170C
TYPICAL APPLICATIONS
PIN 1
PIN 2
K
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
HEATSINK
MECHANICAL DATA
Case: TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
PRIMARY CHARACTERISTICS
IF(AV)
2 x 5 A
170 V
VRRM
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
IFSM
80 A
VF at IF = 5.0 A
TJ max.
Package
0.65 V
175 °C
TO-263AB
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
Diode variations
Common cathode
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VB10170C
UNIT
Maximum repetitive peak reverse voltage
VRRM
170
10
5
V
per device
per diode
Maximum average forward rectified current
(fig. 1)
IF(AV)
A
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
80
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
°C
Operating junction and storage temperature range
TJ, TSTG
-40 to +175
Revision: 11-Sep-13
Document Number: 89948
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000