Datasheet > VB10170C-E3

VB10170C-E3

更新时间： 2024-02-25 02:27:15

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	93K
描述
Low forward voltage drop, low power losses

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

VB10170C-E3 数据手册

VB10170C-E3, VB10170C-M3, VB10170CHM3

www.vishay.com

Vishay General Semiconductor

Dual High Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.57 V at I_F= 2.5 A

FEATURES

TMBS^®

TO-263AB

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• AEC-Q101 qualified available

- Automotive ordering code: base P/NHM3

• Meets MSL level 1, per J-STD-020, LF maximum peak of

245 °C

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

VB10170C

PIN 1

PIN 2

HEATSINK

TYPICAL APPLICATIONS

For use in high frequency DC/DC converters, switching

power supplies, freewheeling diodes, OR-ing diode, and

reverse battery protection.

PRIMARY CHARACTERISTICS

I_F(AV)

2 x 5 A

170 V

MECHANICAL DATA

V_RRM

Case: TO-263AB

I_FSM

80 A

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

V_Fat I_F= 5.0 A

T_Jmax.

Package

0.65 V

175 °C

TO-263AB

Base P/N-M3

commercial grade

Base P/NHM3

AEC-Q101 qualified

halogen-free, RoHS-compliant, and

Diode variations

Common cathode

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3, M3, and HM3 suffix meets JESD 201 class 2 whisker

test

Polarity: As marked

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VB10170C

UNIT

Maximum repetitive peak reverse voltage

V_RRM

170

per device

per diode

Maximum average forward rectified current

(fig. 1)

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

Voltage rate of change (rated V_R)

dV/dt

10 000

V/μs

°C

Operating junction and storage temperature range

T_J, T_STG

-40 to +175

Revision: 03-Jan-17

Document Number: 89948

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4

中文翻译

下载PDF

与VB10170C-E3相关器件

型号	品牌	获取价格	描述	数据表
VB10170C-E3_15	VISHAY	获取价格	Dual High Voltage Trench MOS Barrier Schottky Rectifier
VB10170CHM3	VISHAY	获取价格	Low forward voltage drop, low power losses
VB10170C-M3	VISHAY	获取价格	Low forward voltage drop, low power losses
VB1020EPL	ETC	获取价格	GENERAL-PURPOSE PHOTOVOLTAIC CELL
VB10X	NJSEMI	获取价格	Diode Schottky 150V 10A 3-Pin(2+Tab) TO-263AB
VB-10X	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 0.08A, 1000V V(RRM), Silicon, PLASTIC PACKAGE-2
VB-10X	NJSEMI	获取价格	High Voltage Diffused Rectifiers
VB11010200J0G	AMPHENOL	获取价格	Barrier Strip Terminal Block
VB11012200J0G	AMPHENOL	获取价格	Barrier Strip Terminal Block
VB11013000J0G	AMPHENOL	获取价格	Barrier Strip Terminal Block