Datasheet > VB10150S-M3_15

VB10150S-M3_15

更新时间： 2024-02-21 07:11:34

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	77K
描述
High-Voltage Trench MOS Barrier Schottky Rectifier

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

VB10150S-M3_15 数据手册

VB10150S-M3

Vishay General Semiconductor

www.vishay.com

High-Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.59 V at I_F= 5.0 A

FEATURES

TMBS^®

• Trench MOS Schottky technology

TO-263AB

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C

• Material categorization:

For definitions of compliance please see

www.vishay.com/doc?99912

VB10150S

TYPICAL APPLICATIONS

For use in high frequency converters, switching power

supplies, freewheeling diodes, OR-ing diode, DC/DC

converters, and reverse battery protection.

HEATSINK

PRIMARY CHARACTERISTICS

MECHANICAL DATA

Package

TO-263AB

10 A

Case: TO-263AB

Molding compound meets UL 94 V-0 flammability rating

I_F(AV)

V_RRM

150 V

Base P/N-M3

- halogen-free, RoHS-compliant, and

commercial grade

I_FSM

120 A

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test

V_Fat I_F= 10 A

T_Jmax.

0.69 V

150 °C

Single die

Diode variations

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V_RRM

I_F(AV)

VB10150S

150

UNIT

Maximum repetitive peak reverse voltage

Maximum average forward rectified current (fig. 1)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

120

Voltage rate of change (rated V_R)

dV/dt

10 000

V/μs

°C

Operating junction and storage temperature range

T_J, T_STG

- 55 to + 150

ELECTRICAL CHARACTERISTICS (T_A= 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

TYP.

0.79

1.05

0.59

0.69

1.3

1.2

MAX.

UNIT

I_F= 5.0 A

1.20

T_A= 25 °C

I_F= 10 A

I_F= 5.0 A

I_F= 10 A

Instantaneous forward voltage

V_F

per diode ⁽¹⁾

T_A= 125 °C

0.75

T_A= 25 °C

T_A= 125 °C

T_A= 25 °C

T_A= 125 °C

μA

V_R= 100 V

V_R= 150 V

Reverse current per diode ⁽²⁾

I_R

150

Notes

(1)

Pulse test: 300 μs pulse width, 1 % duty cycle

Pulse test: Pulse width  40 ms

(2)

Revision: 30-Aug-13

Document Number: 87992

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4

中文翻译

下载PDF

与VB10150S-M3_15相关器件

型号	品牌	获取价格	描述	数据表
VB10170C	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VB10170C-E3	VISHAY	获取价格	Low forward voltage drop, low power losses
VB10170C-E3_15	VISHAY	获取价格	Dual High Voltage Trench MOS Barrier Schottky Rectifier
VB10170CHM3	VISHAY	获取价格	Low forward voltage drop, low power losses
VB10170C-M3	VISHAY	获取价格	Low forward voltage drop, low power losses
VB1020EPL	ETC	获取价格	GENERAL-PURPOSE PHOTOVOLTAIC CELL
VB10X	NJSEMI	获取价格	Diode Schottky 150V 10A 3-Pin(2+Tab) TO-263AB
VB-10X	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 0.08A, 1000V V(RRM), Silicon, PLASTIC PACKAGE-2
VB-10X	NJSEMI	获取价格	High Voltage Diffused Rectifiers
VB11010200J0G	AMPHENOL	获取价格	Barrier Strip Terminal Block

与VB10150S-M3_15相关文章

Pickering新高压舌簧继电器亮相汽车测试博览会
2024-08-26

17
采用MCU+MPU双处理器架构实现的创新应用设计探索
2024-08-23

34
解读L9904TR手册资料：产品概述、主要功能、电气参数
2024-08-20

33
芯片底部填充工艺：提升电子设备可靠性的关键步骤
2024-08-14

93

产品中心

服务支持

精选活动

关于我们

帮助中心

VB10150S-M3_15

VB10150S-M3_15 数据手册

与VB10150S-M3_15相关器件

与VB10150S-M3_15相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

VB10150S-M3_15

VB10150S-M3_15 数据手册

与VB10150S-M3_15相关器件

与VB10150S-M3_15相关文章

您还可以找

您在本页遇到什么问题？