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V60DM100C PDF预览

V60DM100C

更新时间: 2023-12-06 20:03:34
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 106K
描述
Dual High-Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.40 V at IF = 5.0 A

V60DM100C 数据手册

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V60DM100C  
Vishay General Semiconductor  
www.vishay.com  
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)  
70  
60  
50  
40  
30  
20  
10  
0
1000  
100  
TJ = 175 °C  
RthJC = 0.8 °C/W  
10  
1
TJ = 150 °C  
TJ = 100 °C  
TJ = 125 °C  
0.1  
0.01  
TJ = 25 °C  
TJ = -40 °C  
0.001  
0.0001  
0.00001  
RthJA = 50 °C/W  
0
25  
50  
75  
100  
125  
150  
175  
10 20 30 40 50 60 70 80 90 100  
Case Temperature (°C)  
Percent of Rated Peak Reverse Voltage (%)  
Fig. 1 - Maximum Forward Current Derating Curve  
Fig. 4 - Typical Reverse Leakage Characteristics  
30  
10 000  
TJ = 25 °C  
f = 1.0 MHz  
D = 0.8  
25  
Vsig = 50 mVp-p  
D = 0.5  
20  
1000  
100  
10  
D = 1.0  
D = 0.3  
15  
D = 0.2  
10  
T
D = 0.1  
5
D = tp/T  
tp  
0
0
5
10  
15  
20  
25  
30  
35  
0.1  
1
10  
100  
Average Forward Current (A)  
Reverse Voltage (V)  
Fig. 2 - Average Power Loss Characteristics  
Fig. 5 - Typical Junction Capacitance  
100  
10  
100  
10  
1
Junction-to-ambient  
TJ = 175 °C  
TJ = 150 °C  
TJ = 125 °C  
TJ = 100 °C  
1
0.1  
0.01  
TJ = 25 °C  
TJ = -40 °C  
0.1  
0
0.2  
0.4  
0.6  
0.8  
1.0  
0.01  
0.1  
1
10  
100  
Instantaneous Forward Voltage (V)  
Fig. 3 - Typical Instantaneous Forward Characteristics  
t - Pulse Duration (s)  
Fig. 6 - Typical Transient Thermal Impedance  
Revision: 18-Mar-2019  
Document Number: 87578  
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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