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V60DL63C PDF预览

V60DL63C

更新时间: 2023-12-06 20:07:41
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 126K
描述
Dual Low-Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.29 V at IF = 5.0 A

V60DL63C 数据手册

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V60DL63C  
Vishay General Semiconductor  
www.vishay.com  
ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
IF = 5 A  
SYMBOL  
TYP.  
0.41  
0.48  
0.56  
0.29  
0.40  
0.52  
-
MAX.  
UNIT  
-
-
IF = 15 A  
IF = 30 A  
IF = 5 A  
TJ = 25 °C  
0.63  
-
(1)  
Instantaneous forward voltage per diode  
VF  
V
IF = 15 A  
IF = 30 A  
TJ = 125 °C  
-
0.58  
0.7  
50  
-
TJ = 25 °C  
(2)  
Reverse current at rated VR per diode  
Typical junction capacitance per diode  
VR = 60 V  
IR  
mA  
pF  
TJ = 125 °C  
20  
4.0 V, 1 MHz  
CJ  
4700  
Notes  
(1)  
Pulse test: 300 μs pulse width, 1 % duty cycle  
Pulse test: Pulse width 5 ms  
(2)  
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
V60DL63C  
UNIT  
(1)  
RθJC  
0.8  
50  
Typical thermal resistance per device  
°C/W  
(2)(3)  
RθJA  
Notes  
(1)  
Mounted on infinite heatsink  
(2)  
(3)  
The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RθJA - junction-to-ambient  
Free air, without heatsink  
ORDERING INFORMATION (Example)  
PREFERRED P/N  
UNIT WEIGHT (g)  
PACKAGE CODE  
BASE QUANTITY  
2000/reel  
DELIVERY MODE  
V60DL63C-M3/I  
V60DL63CHM3/I (1)  
0.55  
0.55  
I
I
13" diameter plastic tape and reel  
13" diameter plastic tape and reel  
2000/reel  
Note  
(1)  
AEC-Q101 qualified  
Revision: 08-Oct-2021  
Document Number: 98252  
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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