Datasheet > V40PWM15C

V40PWM15C

更新时间： 2022-02-26 12:17:36

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	121K
描述
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

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V40PWM15C 数据手册

V40PWM15C

Vishay General Semiconductor

www.vishay.com

ELECTRICAL CHARACTERISTICS (T_A= 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

TYP.

0.77

0.97

1.36

0.60

0.69

0.76

0.01

MAX.

UNIT

I_F= 5.0 A

I_F= 10 A

I_F= 20 A

I_F= 5.0 A

I_F= 10 A

I_F= 20 A

T_A= 25 °C

1.45

(1)

Instantaneous forward voltage per diode

V_F

T_A= 125 °C

0.84

T_A= 25 °C

T_A= 125 °C

T_A= 25 °C

T_A= 125 °C

V_R= 100 V

(2)

Reverse current per diode

Typical junction capacitance

I_R

0.5

V_R= 150 V

4.0 V, 1 MHz

C_J

870

Notes

(1)

Pulse test: 300 μs pulse width, 1 % duty cycle

Pulse test: pulse width ≤ 5 ms

(2)

THERMAL CHARACTERISTICS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V40PWM15C

UNIT

(1)(2)

R_θJA

Typical thermal resistance

°C/W

(3)

R_θJM

1.5

Notes

(1)

The heat generated must be less than thermal conductivity from junction-to-ambient: dP_D/dT_J< 1/R_θJA

Free air, mounted on recommended copper pad area; thermal resistance R_θJA- junction to ambient

Mounted on infinite heat sink; thermal resistance R_θJM- junction-to-mount

(2)

(3)

ORDERING INFORMATION (Example)

PREFERRED P/N

V40PWM15C-M3/I

V40PWM15CHM3/I ⁽¹⁾

UNIT WEIGHT (g) PREFERRED PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

0.20

4500

13" diameter plastic tape and reel

Note

(1)

AEC-Q101 qualified

Revision: 01-Jun-17

Document Number: 87506

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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