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V23990-P580-A46-PM PDF预览

V23990-P580-A46-PM

更新时间: 2024-10-28 21:21:43
品牌 Logo 应用领域
VINCOTECH
页数 文件大小 规格书
25页 698K
描述
Insulated Gate Bipolar Transistor

V23990-P580-A46-PM 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
Reach Compliance Code:compliant风险等级:5.73
Base Number Matches:1

V23990-P580-A46-PM 数据手册

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V23990-P580-A46-PM  
preliminary datasheet  
flowPIM 1 3rd gen  
1200V / 35A  
Features  
flowPIM1 housing  
3~ rectifier, BRC, Inverter, NTC  
Very compact housing, easy to route  
IGBT4 / EmCon4 technology for low saturation losses  
and improved EMC behaviour  
High performance with AlN substrate  
Target Applications  
Motor Drives  
Schematic  
Power Generation  
Types  
V23990-P580-A46-PM  
Maximum Ratings  
Tj=25°C, unless otherwise specified  
Condition  
Parameter  
Symbol  
Value  
Unit  
Input Rectifier Diode  
Peak repetitive reverse voltage  
Forward current per diode  
Surge forward current  
VRRM  
IFAV  
1600  
50  
V
A
A
Th=80°C  
DC current  
tp=10ms  
IFSM  
320  
510  
82  
Tj=45°C  
Th=80°C  
I2t-value  
I2t  
A2s  
W
Ptot  
Tj=Tjmax  
Power dissipation per diode  
Maximum junction temperature  
Tjmax  
150  
°C  
Inverter Transistor  
VCE  
IC  
ICpulse  
Ptot  
Collector-emitter break down voltage  
DC collector current  
1200  
49  
V
A
Tj=Tjmax  
Th=80°C  
Th=80°C  
tp limited by Tjmax  
Tj=Tjmax  
Repetitive peak collector current  
Power dissipation per IGBT  
Gate-emitter peak voltage  
Short circuit ratings  
105  
152  
±20  
A
W
V
VGE  
tSC  
Tj150°C  
10  
μs  
VCC  
VGE=15V  
800  
V
Tjmax  
Maximum junction temperature  
175  
°C  
copyright Vincotech  
1
Revision: 1  

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