Datasheet > V23990-P580-A46-PM

V23990-P580-A46-PM

更新时间： 2024-01-19 21:05:57

品牌	Logo	应用领域
VINCOTECH		栅
页数	文件大小	规格书
25页	698K
描述
Insulated Gate Bipolar Transistor

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技术参数
数据手册

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V23990-P580-A46-PM 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
Reach Compliance Code：	compliant	风险等级：	5.73
Base Number Matches：	1

V23990-P580-A46-PM 数据手册

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V23990-P580-A46-PM

preliminary datasheet

flowPIM 1 3rd gen

1200V / 35A

Features

flowPIM1 housing

● 3~ rectifier, BRC, Inverter, NTC

● Very compact housing, easy to route

● IGBT4 / EmCon4 technology for low saturation losses

and improved EMC behaviour

● High performance with AlN substrate

Target Applications

● Motor Drives

Schematic

● Power Generation

Types

● V23990-P580-A46-PM

Maximum Ratings

Tj=25°C, unless otherwise specified

Condition

Parameter

Symbol

Value

Unit

Input Rectifier Diode

Peak repetitive reverse voltage

Forward current per diode

Surge forward current

V_RRM

I_FAV

1600

T_h=80°C

DC current

t_p=10ms

I_FSM

320

510

T_j=45°C

T_h=80°C

I²t-value

I²t

A²s

P_tot

T_j=T_jmax

Power dissipation per diode

Maximum junction temperature

T_jmax

150

°C

Inverter Transistor

V_CE

I_C

I_Cpulse

P_tot

Collector-emitter break down voltage

DC collector current

1200

T_j=T_jmax

T_h=80°C

t_plimited by T_jmax

T_j=T_jmax

Repetitive peak collector current

Power dissipation per IGBT

Gate-emitter peak voltage

Short circuit ratings

105

152

±20

V_GE

t_SC

T_j≤150°C

μs

V_CC

V_GE=15V

800

T_jmax

Maximum junction temperature

175

°C

Revision: 1

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