Datasheet > V23990-K430-F42-PM

V23990-K430-F42-PM

更新时间： 2023-09-03 20:33:45

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
18页	7244K
描述
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current

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V23990-K430-F42-PM

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Inverter Switch

Static

V_GE(th)

V_CEsat

I_CES

I_GES

r_g

Gate-emitter threshold voltage

Collector-emitter saturation voltage

Collector-emitter cut-off current

Gate-emitter leakage current

Internal gate resistance

Input capacitance

V_CE= V_GE

0,0052

150

5,3

5,8

6,3

1,58

1,93

2,4

2,07⁽¹⁾

150

1200

µA

240

C_ies

C_res

Q_g

8600

320

f = 1 Mhz

Reverse transfer capacitance

Gate charge

1140

Thermal

λ_paste= 2,5 W/mK

(HPTP)

(2)

R_th(j-s)

Thermal resistance junction to sink

Dynamic

0,19

K/W

175

t_d(on)

Turn-on delay time

Rise time

150

192,6

46,2

t_r

150

52,8

R_gon= 2 Ω

R_goff= 2 Ω

288,4

375,4

58,36

99,6

t_d(off)

Turn-off delay time

Fall time

150

±15

600

150

t_f

150

Q_rFWD=7,99 µC

Q_rFWD=24,28 µC

14,99

23,03

8,26

E_on

E_off

Turn-on energy (per pulse)

Turn-off energy (per pulse)

mWs

150

14,15

29 Sep. 2021 / Revision 5

1 234 5 6 7...18

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