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V23990-P541-C21-PM PDF预览

V23990-P541-C21-PM

更新时间: 2024-02-17 08:04:07
品牌 Logo 应用领域
VINCOTECH
页数 文件大小 规格书
20页 399K
描述
Insulated Gate Bipolar Transistor

V23990-P541-C21-PM 技术参数

生命周期:Contact ManufacturerReach Compliance Code:compliant
风险等级:5.73Base Number Matches:1

V23990-P541-C21-PM 数据手册

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V23990-P541-A21/ C21-PM  
final datasheet  
flow PIM 0  
600V / 6A  
Features  
flow 0 housing  
ꢀ Tyco clip-in housing  
ꢀ Trench Fieldstop IGBT's for low saturation losses  
ꢀ Optional w/o BRC  
Target Applications  
ꢀ Industrial Drives  
ꢀ Embedded Generation  
Schematic  
Types  
ꢀ V23990-P541-A21-PM  
ꢀ V23990-P541-C21-PM without BRC  
Maximum Ratings  
Condition  
Parameter  
Symbol  
Value  
Unit  
Input Rectifier Bridge  
Repetitive peak reverse voltage  
Forward current per diode  
Surge forward current  
VRRM  
IFAV  
1600  
V
A
Th=80°C  
Tc=80°C  
Tj=25°C  
35  
40  
250  
DC current  
tp=10ms  
IFSM  
A
Tj=25°C  
310  
I2t-value  
I2t  
A2s  
W
Th=80°C  
Tc=80°C  
40  
61  
Ptot  
Tj=Tjmax  
Power dissipation per Diode  
Maximum junction temperature  
Tjmax  
150  
°C  
Transistor Inverter  
Collector-emitter break down voltage  
DC collector current  
VCE  
IC  
600  
V
A
Th=80°C  
Tc=80°C  
12  
15  
Tj=Tjmax  
tp limited by  
Tjmax  
Icpuls  
Ptot  
VGE  
Repetitive peak collector current  
Power dissipation per IGBT  
Gate-emitter peak voltage  
18  
A
Th=80°C  
Tc=80°C  
34,2  
51,8  
Tj=Tjmax  
W
V
20  
Tjꢁ150°C  
VCC=360V  
VGE=15V  
tSC  
SC withstand time*  
6
s  
Tjmax  
Maximum junction temperature  
175  
°C  
* It is recommended to not exceed 1000 short circuit situations in the lifetime of the module and to allow at least 1s between short circuits  
Copyright by Vincotech  
Revision: 1  
1

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