Datasheet > V23990-P541-C38-PM

V23990-P541-C38-PM

更新时间： 2024-01-30 01:38:36

品牌	Logo	应用领域
VINCOTECH		栅
页数	文件大小	规格书
20页	593K
描述
Insulated Gate Bipolar Transistor

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技术参数
数据手册

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V23990-P541-C38-PM 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.73	Base Number Matches：	1

V23990-P541-C38-PM 数据手册

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V23990-P541-A38 / C38-PM

preliminary datasheet

flow PIM 0

600V/10A

Features

flow housing

● 12mm and 17mm 2-Clip Housing

● Trench Fieldstop IGBT's for low saturation losses

● Optional with enhanced rectifier and w/o BRC

Target Applications

Schematic

● Industrial Drives

● Embedded Drives

Types

● V23990-P541-A38-PM

● V23990-P541-C38-PM w/o BRC

Maximum Ratings

Condition

Parameter

Symbol

Value

Unit

Input Rectifier Bridge

Repetitive peak reverse voltage

Forward current per diode

Surge forward current

V_RRM

I_FAV

1600

T_h=80°C

T_c=80°C

T_j=25°C

DC current

t_p=10ms

250

I_FSM

T_j=25°C

310

I²t-value

I²t

A2s

T_h=80°C

T_c=80°C

P_tot

T_j=T_jmax

Power dissipation per Diode

Maximum junction temperature

T_jmax

150

600

°C

Transistor Inverter

Collector-emitter break down voltage

DC collector current

V_CE

I_C

T_h=80°C

T_c=80°C

T_j=T_jmax

tp limited by

T_jmax

I_cpuls

P_tot

V_GE

Repetitive peak collector current

Power dissipation per IGBT

Gate-emitter peak voltage

T_h=80°C

T_c=80°C

34.2

T_j=T_jmax

±20

Tj≤150°C

VCC=360V

VGE=15V

t_SC

SC withstand time*

μs

T_jmax

Maximum junction temperature

175

°C

* It is recommended to not exceed 1000 short circuit situations in the lifetime of the module and to allow at least 1s between short circuits

Revision: 1

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