Datasheet > V23990-K209-A-/0B/-PM

V23990-K209-A-/0B/-PM

更新时间： 2024-01-14 14:54:20

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V23990-K209-A-PM

datasheet

T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7

Figure 13

FWD

Figure 14

FWD

Typical reverse recovery charge as a

function of collector current

Q_rr= f(I_C)

Typical reverse recovery charge as a

function of IGBT turn on gate resistor

Q_rr= f(R_gon

)

2,5

T_j= T_jmax-25°C

Q_rr

1,6

1,2

0,8

0,4

T_j= T_jmax-25°C

Q_rr

1,5

Q_rr

T_j= 25°C

0,5

I _C(A)

R _{g on}( Ω)

120

160

200

T_j=

V_CE

V_GE

T_j=

°C

25/125

600

25/125

600

V_R=

I_F=

±15

R_gon

V_GE=

ꢀ

±15

Figure 15

FWD

Figure 16

FWD

Typical reverse recovery current as a

function of collector current

I_RRM= f(I_C)

Typical reverse recovery current as a

function of IGBT turn on gate resistor

I_RRM= f(R_gon

)

T_j= T_jmax-25°C

I_RRM

T_j= 25°C

I_RRM

T_j= T_jmax- 25°C

I_RRM

T_j= 25°C

I _C(A)

R _gon( Ω )

200

120

160

T_j=

V_CE

V_GE

T_j=

°C

25/125

600

25/125

600

V_R=

I_F=

±15

R_gon

V_GE=

ꢀ

±15

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