型号 | 品牌 | 描述 | 获取价格 | 数据表 |
V23990-K219-F40-PM | VINCOTECH | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive tem |
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V23990-K220-A40-/0A/-PM | VINCOTECH | Insulated Gate Bipolar Transistor, 38A I(C), 1200V V(BR)CES, N-Channel |
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V23990-K220-A40-/0B/-PM | VINCOTECH | Insulated Gate Bipolar Transistor, 38A I(C), 1200V V(BR)CES, N-Channel |
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V23990-K220-A40-/1A/-PM | VINCOTECH | Insulated Gate Bipolar Transistor, 38A I(C), 1200V V(BR)CES, N-Channel |
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V23990-K220-A40-/1B/-PM | VINCOTECH | Insulated Gate Bipolar Transistor, 38A I(C), 1200V V(BR)CES, N-Channel |
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V23990-K220-A40-0A-PM | VINCOTECH | Trench Fieldstop IGBT4 technology |
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