PROXIMITY FOCUSED
IMAGE INTENSIFIER
V12841D-G130
FEATURES
GCompact and Light Weight
GHigh Photocathode Sensitivity in NIR Region
Quantum Efficiency (Typ.) ... 30 % at the wavelength of peak response
GHigh Resolution (Typ.) ......... 64 Lp/mm
GGating Operation .................. 5 ns (Minimum gate width)
APPLICATIONS
GLaser Ranging
GSurveillance Observation
GTime Resolved Low-light-level Imaging
SPECIFICATIONS
GENERAL
Parameter
Description / Value
370 to 920
600 to 750
GaAs
12.8 × 9.6
Borosilicate Glass
3.0
Unit
nm
nm
—
mm
—
Spectral Response
Wavelength of Peak Response
Material
Minimum Effective Area
Material
Thickness
Photocathode
Input Window
mm
—
Stage of MCP
1
—
mm
—
Material
Minimum Effective Area
Output Window Material
Weight
P43
Phosphor Screen
12.8 × 9.6
Fiber Optic Plate
31.3
g
°C
%
°C
%
Operating Ambient Temperature
Operating Ambient Humidity A
Storage Temperature
Storage Humidity A
-20 to +40
Below 70
-55 to +60
Below 70
NOTE: ANo condensation
CHARACTERISTICS (at +20 °C)
Parameter
Min.
1000
—
Typ.
1500
30
Max.
—
—
Unit
µA/lm
%
(lm/m2)/lx
lm/cm2
Lp/mm
ns
Luminous Sensitivity
Quantum Efficiency B
Luminous Gain
Luminous
Photocathode
Light Gain
EBI
1.0 × 104
—
4.0 × 104
2.0 × 10-11
64
—
5.0 × 10-11
—
Limiting Resolution
Response Time (Gate Width)
50
5
—
—
NOTE: BAt the wavelength of peak response
RATINGS
D
Parameter
Min.
150
500
Typ.
200
1000
6000
Max.
Unit
V
V
Photocathode to MCPin C
230
1010
6100
Supply Voltage
MCPin to MCPout C
MCPout to Phosphor Screen C
V
5000
NOTE: CThe maximum and recommended supply voltage are noted on the test data sheet when the product is delivered. Please refer to the test data sheet for these values.
Absolute maximum values.
D
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Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2014 Hamamatsu Photonics K.K.