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V10P10-M386A PDF预览

V10P10-M386A

更新时间: 2022-02-26 09:38:52
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 111K
描述
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

V10P10-M386A 数据手册

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New Product  
V10P10  
Vishay General Semiconductor  
High Current Density Surface Mount  
Trench MOS Barrier Schottky Rectifier  
Ultra Low V = 0.453 V at I = 5 A  
F
F
FEATURES  
• Very low profile - typical height of 1.1 mm  
TMBS® eSMPTM Series  
• Ideal for automated placement  
• Trench MOS Schottky technology  
K
• Low forward voltage drop, low power  
losses  
1
2
• High efficiency operation  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
TO-277A (SMPC)  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
Anode 1  
Anode 2  
K
Cathode  
Halogen-free  
MECHANICAL DATA  
Case: TO-277A (SMPC)  
PRIMARY CHARACTERISTICS  
IF(AV)  
VRRM  
IFSM  
10 A  
Molding compound meets UL 94V-0 flammability  
rating.  
100 V  
Base P/N-E3 - RoHS compliant, commercial grade  
Base P/NHE3 - RoHS compliant, high reliability/  
automotive grade (AEC-Q101 qualified)  
Base P/N-M3 - halogen-free and RoHS compliant,  
commercial grade  
180 A  
EAS  
100 mJ  
0.574 V  
150 °C  
VF at IF = 10 A  
TJ max.  
Base P/NHM3 - halogen-free and RoHS compliant,  
high reliability/automotive grade (AEC-Q101 qualified)  
TYPICAL APPLICATIONS  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 and M3 suffix meets JESD 201 class 1A whisker  
test, HE3 and HM3 suffix meets JESD 201 class 2  
whisker test  
For use in low voltage high frequency inverters,  
freewheeling, dc-to-dc converters and polarity  
protection applications.  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
V10P10  
V1010  
100  
UNIT  
Device marking code  
VRRM  
IF(AV)  
Maximum repetitive peak reverse voltage  
Maximum average forward rectified current (Fig. 1)  
V
A
10  
Peak forward surge current 10 ms single half sine-wave  
superimposed on rated load  
IFSM  
180  
A
Non-repetitive avalanche energy  
at IAS = 2.0 A, TJ = 25 °C  
EAS  
100  
mJ  
°C  
TJ, TSTG  
Operating junction and storage temperature range  
- 40 to + 150  
Document Number: 89006  
Revision: 30-Jul-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

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