Datasheet > V10P10-M3-87A

V10P10-M3-87A

更新时间： 2024-01-27 23:29:29

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	95K
描述
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

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V10P10-M3-87A 数据手册

New Product

V10P10

Vishay General Semiconductor

High Current Density Surface Mount

Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.453 V at I_F= 5 A

FEATURES

• Very low profile - typical height of 1.1 mm

TMBS^®eSMP^®Series

• Ideal for automated placement

• Trench MOS Schottky technology

• Low forward volatge drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 260 °C

• AEC-Q101 qualified

TO-277A (SMPC)

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

Anode 1

Anode 2

Cathode

• Halogen-free according to IEC 61249-2-21 definition

PRIMARY CHARACTERISTICS

MECHANICAL DATA

I_F(AV)

10 A

100 V

180 A

Case: TO-277A (SMPC)

Molding compound meets UL 94 V-0 flammability rating

V_RRM

Base P/N-M3

- halogen-free, RoHS compliant, and

I_FSM

commercial grade

Base P/NHM3 - halogen-free, RoHS compliant, and

automotive grade

E_AS

100 mJ

0.574 V

150 °C

V_Fat I_F= 10 A

T_Jmax.

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix

meets JESD 201 class 2 whisker test

TYPICAL APPLICATIONS

For use in low voltage high frequency inverters,

freewheeling, DC/DC converters, and polarity protection

applications.

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V10P10

V1010

100

UNIT

Device marking code

Maximum repetitive peak reverse voltage

Maximum average forward rectified current (fig. 1)

V_RRM

I_F(AV)

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load

I_FSM

E_AS

180

100

Non-repetitive avalanche energy

at I_AS= 2.0 A, T_J= 25 °C

Peak repetitive reverse current at t_p= 2 µs, 1 kHz,

T_J= 38 °C 2 °C

I_RRM

1.0

Operating junction and storage temperature range

T_J, T_STG

- 40 to + 150

°C

Document Number: 89006

Revision: 25-May-11

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与V10P10-M3-87A相关器件

型号	品牌	获取价格	描述	数据表
V10P11P	LITTELFUSE	获取价格	Superior Peak Surge Current Ratings in Small Disc Sizes
V10P12	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V10P12_15	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V10P12HM3-86A	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V10P12HM3-87A	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V10P12-M3-86A	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V10P12-M3-87A	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V10P130AUTO	LITTELFUSE	获取价格	RADIAL VARISTOR 10MM ROHS/LEAD F
V10P130PL1T	LITTELFUSE	获取价格	VARISTOR 205V 3.5KA DISC 10MM
V10P140AUTO	LITTELFUSE	获取价格	RADIAL VARISTOR 10MM ROHS/LEAD F

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