Datasheet > V10P12_15

V10P12_15

更新时间： 2024-01-26 11:47:41

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	84K
描述
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

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V10P12_15 数据手册

V10P12

Vishay General Semiconductor

www.vishay.com

High Current Density Surface Mount

Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.51 V at I_F= 5 A

FEATURES

• Very low profile - typical height of 1.1 mm

Available

TMBS^®eSMP^®Series

• Ideal for automated placement

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 260 °C

• AEC-Q101 qualified available

- Automotive ordering code; base P/NHM3

TO-277A (SMPC)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Anode 1

Anode 2

Cathode

TYPICAL APPLICATIONS

For use in low voltage high frequency inverters,

freewheeling, DC/DC converters and polarity protection

applications.



PRIMARY CHARACTERISTICS

MECHANICAL DATA

I_F(AV)

10 A

120 V

Case: TO-277A (SMPC)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3

commercial grade

Base P/NHM3

AEC-Q101 qualified

V_RRM

I_FSM

160 A

100 mJ

0.62 V

150 °C

halogen-free, RoHS-compliant, and

E_AS

V_Fat I_F= 10 A

T_Jmax.

- halogen-free, RoHS-compliant and

Base P/NHM3_X - halogen-free, RoHS-compliant and

AEC-Q101 qualified 

(“_X” denotes revision code e.g. A, B,.....)

Package

TO-277A (SMPC)

Single

Diode variations

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix

meets JESD 201 class 2 whisker test

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V10P12

V1012

120

UNIT

Device marking code

Maximum repetitive peak reverse voltage

Maximum average forward rectified current (fig. 1)

V_RRM

I_F(AV)

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load

I_FSM

160

Non-repetitive avalanche energy at I_AS= 2.0 A, T_J= 25 °C

Peak repetitive reverse current at t_p= 2 μs, 1 kHz, T_J= 38 °C 2 °C

Operating junction and storage temperature range

E_AS

I_RRM

100

0.5

T_J, T_STG

-40 to +150

°C

Revision: 16-Dec-14

Document Number: 89171

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

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与V10P12_15相关器件

型号	品牌	获取价格	描述	数据表
V10P12HM3-86A	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V10P12HM3-87A	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V10P12-M3-86A	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
V10P12-M3-87A	VISHAY	获取价格	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
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