Datasheet > V10P20_15

V10P20_15

更新时间： 2024-11-30 01:26:15

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	82K
描述
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

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中文翻译

获取价格

数据手册

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V10P20_15 数据手册

V10P20

Vishay General Semiconductor

www.vishay.com

High Current Density Surface Mount

Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.59 V at I_F= 5 A

FEATURES

TMBS^®eSMP^®Series

• Very low profile - typical height of 1.1 mm

• Ideal for automated placement

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

TO-277A (SMPC)

Anode 1

Anode 2

Cathode

TYPICAL APPLICATIONS

For use in low voltage high frequency inverters,

freewheeling, DC/DC converters and polarity protection

applications.

PRIMARY CHARACTERISTICS

MECHANICAL DATA

Case: TO-277A (SMPC)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3 - halogen-free,

commercial grade

I_F(AV)

10 A

200 V

180 A

0.67 V

150 °C

V_RRM

I_FSM

RoHS-compliant, and

V_Fat I_F= 10 A

T_Jmax.

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 2 whisker test

Package

Diode variation

TO-277A

Single

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V10P20

V1020

200

UNIT

Device marking code

Maximum repetitive peak reverse voltage

V_RRM

(1)

I_F

Maximum average forward rectified current (fig. 1)

(2)

I_F

2.4

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load

I_FSM

180

Voltage rate of change (rated V_R)

dV/dt

10 000

V/μs

°C

Operating junction and storage temperature range

T_J, T_STG

- 40 to + 150

Notes

(1)

Mounted on 30 mm x 30 mm pad areas aluminum PCB

Free air, mounted on recommended copper pad area

(2)

Revision: 15-Aug-13

Document Number: 89316

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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