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UZTX605 PDF预览

UZTX605

更新时间: 2024-11-04 19:54:19
品牌 Logo 应用领域
捷特科 - ZETEX 开关晶体管
页数 文件大小 规格书
3页 74K
描述
Small Signal Bipolar Transistor, 1A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92 COMPATIBLE, E-LINE PACKAGE-3

UZTX605 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:CYLINDRICAL, O-PBCY-W3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.22最大集电极电流 (IC):1 A
集电极-发射极最大电压:120 V配置:DARLINGTON
最小直流电流增益 (hFE):2000JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-W3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:200 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):260
极性/信道类型:NPN功耗环境最大值:2.5 W
认证状态:Not Qualified参考标准:CECC
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:WIRE端子位置:BOTTOM
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
VCEsat-Max:1.5 VBase Number Matches:1

UZTX605 数据手册

 浏览型号UZTX605的Datasheet PDF文件第2页浏览型号UZTX605的Datasheet PDF文件第3页 
NPN SILICON PLANAR MEDIUM POWER  
DARLINGTON TRANSISTORS  
ISSUE 1 – MARCH 94  
ZTX604  
ZTX605  
FEATURES  
*
*
*
*
120 Volt VCEO  
1 Amp continuous current  
Gain of 2K at IC=1 Amp  
Ptot= 1 Watt  
C
B
E
E-Line  
TO92 Compatible  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
ZTX604  
120  
ZTX605  
140  
UNIT  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
V
A
A
100  
120  
10  
4
Peak Pulse Current  
Continuous Collector Current  
IC  
1
Power Dissipation at Tamb=25°C  
derate above 25°C  
Ptot  
1
5.7  
W
mW/ °C  
Operating and Storage Temperature Range  
Tj:Tstg  
-55 to +200  
°C  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL  
ZTX604  
ZTX605  
UNIT CONDITIONS.  
MIN. MAX. MIN. MAX.  
Collector-Base  
Breakdown Voltage  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
120  
100  
10  
140  
120  
10  
V
V
V
IC=100µA  
IC=10mA*  
IE=100µA  
Collector-Emitter  
Breakdown Voltage  
Emitter-Base  
Breakdown Voltage  
Collector Cut-Off  
Current  
0.01  
10  
V
CB=100V  
CB=120V  
VCB=100V,T =100°C  
CB=120V,T =100°C  
µA  
µA  
µA  
µA  
0.01  
V
10  
V
Emitter Cut-Off  
Current  
IEBO  
0.1  
10  
0.1  
VEB=8V  
µA  
Colllector-Emitter  
Cut-Off Current  
ICES  
VCES=100V  
VCES=120V  
µA  
10  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
VBE(sat)  
VBE(on)  
1.0  
1.5  
1.0  
1.5  
V
V
IC=250mA, IB=0.25mA*  
IC=1A, IB=1mA*  
Base-Emitter  
Saturation Voltage  
1.8  
1.8  
V
IC=1A, IB=1mA*  
Base-Emitter  
Turn-On Voltage  
1.7  
1.7  
V
IC=1A, VCE=5V*  
3-212  

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