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UZTX649 PDF预览

UZTX649

更新时间: 2024-11-04 19:58:35
品牌 Logo 应用领域
美台 - DIODES 开关晶体管
页数 文件大小 规格书
3页 61K
描述
Small Signal Bipolar Transistor, 2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, E-LINE PACKAGE-3

UZTX649 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:IN-LINE, R-PSIP-W3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.23
最大集电极电流 (IC):2 A集电极-发射极最大电压:25 V
配置:SINGLE最小直流电流增益 (hFE):15
JESD-30 代码:R-PSIP-W3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:WIRE
端子位置:SINGLE处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):240 MHzBase Number Matches:1

UZTX649 数据手册

 浏览型号UZTX649的Datasheet PDF文件第2页浏览型号UZTX649的Datasheet PDF文件第3页 
NPN SILICON PLANAR  
ZTX649  
MEDIUM POWER TRANSISTOR  
ISSUE 2 – APRIL 94  
FEATURES  
*
*
*
*
25 Volt VCEO  
2 Amp continuous current  
Low saturation voltage  
Ptot=1 Watt  
APPLICATIONS  
C
B
E
*
*
Motor driver  
E-Line  
DC-DC converters  
TO92 Compatible  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
35  
25  
5
V
V
Peak Pulse Current  
6
A
Continuous Collector Current  
IC  
2
A
Power Dissipation at Tamb=25°C  
derate above 25°C  
Ptot  
1
5.7  
W
mW/ °C  
Operating and Storage Temperature Range  
Tj:Tstg  
-55 to +200  
°C  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL MIN.  
V(BR)CBO 35  
TYP.  
MAX. UNIT  
V
CONDITIONS.  
Collector-Base  
Breakdown Voltage  
IC=100µA  
Collector-Emitter  
Breakdown Voltage  
V(BR)CEO 25  
V
V
IC=10mA*  
Emitter-Base  
Breakdown Voltage  
V(BR)EBO  
ICBO  
5
IE=100µA  
Collector Cut-Off  
Current  
0.1  
10  
VCB=30V  
VCB=30V,T  
µA  
µA  
=100°C  
Emitter Cut-Off Current IEBO  
0.1  
VEB=4V  
µA  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
VBE(sat)  
VBE(on)  
0.12  
0.23  
0.3  
0.5  
V
V
IC=1A, IB=100mA*  
IC=2A, IB=200mA*  
Base-Emitter  
Saturation Voltage  
0.9  
1.25  
V
IC=1A, IB=100mA*  
Base-Emitter  
Turn-On Voltage  
0.8  
1
V
IC=1A, VCE=2V*  
Static Forward Current hFE  
Transfer Ratio  
70  
100  
75  
200  
200  
150  
50  
IC=50mA, VCE=2V*  
IC=1A, VCE=2V*  
IC=2A, VCE=2V*  
IC=6A, VCE=2V*  
300  
15  
Transition Frequency  
fT  
150  
240  
MHz  
IC=100mA, VCE=5V  
f=100MHz  
3-216  

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