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UTT75N06G-S08-R PDF预览

UTT75N06G-S08-R

更新时间: 2024-12-01 19:51:35
品牌 Logo 应用领域
友顺 - UTC 开关脉冲光电二极管晶体管
页数 文件大小 规格书
6页 181K
描述
Power Field-Effect Transistor,

UTT75N06G-S08-R 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G8Reach Compliance Code:compliant
风险等级:5.66雪崩能效等级(Eas):80 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):75 A最大漏极电流 (ID):75 A
最大漏源导通电阻:0.037 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):2 W
最大脉冲漏极电流 (IDM):150 A表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

UTT75N06G-S08-R 数据手册

 浏览型号UTT75N06G-S08-R的Datasheet PDF文件第2页浏览型号UTT75N06G-S08-R的Datasheet PDF文件第3页浏览型号UTT75N06G-S08-R的Datasheet PDF文件第4页浏览型号UTT75N06G-S08-R的Datasheet PDF文件第5页浏览型号UTT75N06G-S08-R的Datasheet PDF文件第6页 
UNISONIC TECHNOLOGIES CO., LTD  
UTT75N06  
Preliminary  
Power MOSFET  
75A, 60V N-CHANNEL  
POWER MOSFET  
DESCRIPTION  
The UTC UTT75N06 is n-channel enhancement mode power  
field effect transistors with stable off-state characteristics, fast  
switching speed, low thermal resistance, usually used at telecom  
and computer application.  
SOP-8  
FEATURES  
* RDS(ON) < 10 m@ VGS = 10 V, ID = 35 A  
* Fast switching capability  
* Avalanche energy specified  
* Improved dv/dt capability  
SYMBOL  
ORDERING INFORMATION  
Pin Assignment  
Ordering Number  
Package  
SOP-8  
Packing  
1
2
3
4
5
6
7
8
UTT75N06G-S08-R  
S
S
S
G
D
D
D
D
Tape Reel  
Note: Pin Assignment: G: Gate D: Drain S: Source  
UTT75N06G-S08-R  
(1)Packing Type  
(1) R: Tape Reel  
(2) S08: SOP-8  
(2)Package Type  
(3)Green Package  
(3) G: Halogen Free and Lead Free  
MARKING  
www.unisonic.com.tw  
1 of 6  
Copyright © 2015 Unisonic Technologies Co., Ltd  
QW-R209-081.a  

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