是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | TO-220, 3 PIN | Reach Compliance Code: | compliant |
风险等级: | 5.15 | 雪崩能效等级(Eas): | 185 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 80 V |
最大漏极电流 (Abs) (ID): | 75 A | 最大漏极电流 (ID): | 75 A |
最大漏源导通电阻: | 0.021 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss): | 118 pF | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 125 W |
最大脉冲漏极电流 (IDM): | 300 A | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
最大关闭时间(toff): | 859 ns | 最大开启时间(吨): | 529 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UTT75N08G-TF1-T | UTC |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
UTT75N08G-TN3-R | UTC |
获取价格 |
75A, 80V N-CHANNEL POWERTRENCH MOSFET | |
UTT75N08G-TN3-T | UTC |
获取价格 |
75A, 80V N-CHANNEL POWERTRENCH MOSFET | |
UTT75N08L-TA3-T | UTC |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
UTT75N08L-TF1-T | UTC |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
UTT75N08L-TN3-R | UTC |
获取价格 |
75A, 80V N-CHANNEL POWERTRENCH MOSFET | |
UTT75N08L-TN3-T | UTC |
获取价格 |
75A, 80V N-CHANNEL POWERTRENCH MOSFET | |
UTT75N08M | UTC |
获取价格 |
N-CH | |
UTT75N75 | UTC |
获取价格 |
80A, 75V N-CHANNEL POWER MOSFET | |
UTT75N75G-TA3-T | UTC |
获取价格 |
80A, 75V N-CHANNEL POWER MOSFET |