Datasheet > UTT26N03-H

UTT26N03-H

更新时间： 2023-12-06 20:08:13

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
5页	312K
描述
N-CH

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

UTT26N03-H 数据手册

UTT26N03-H

Power MOSFET



ABSOLUTE MAXIMUM RATINGS (T_C=25°С, unless otherwise specified)

PARAMETER

SYMBOL

V_DSS

V_GSS

I_D

RATINGS

UNIT

Drain-Source Voltage

Gate-Source Voltage

±12

Continuous Drain Current

Pulsed Drain Current

Continuous

T_C=25°С

Pulsed (Note 2)

I_DM

104

Avalanche Energy, Single Pulsed (Note 3)

Peak Diode Recovery dv/dt (Note4)

Power Dissipation

E_AS

V/ns

dv/dt

P_D

1.5

Junction Temperature

T_J

+150

-55 ~ +150

°C

Storage Temperature Range

T_STG

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature.

3. L=0.1mH, I_AS=18A, V_DD=25V, R_G=25 Ω, Starting T_J=25°C

4. I_SD≤ 26A, di/dt ≤200A/μs, V_DD≤ BV_DSS, Starting T_J=25°C



THERMAL DATA

PARAMETER

SYMBOL

θ_JA

RATINGS

UNIT

°С/W

Junction to Ambient

Junction to Case

θ_JC

3.7

Note: The data tested by surface mounted on a 1 inch²FR-4 board with 2OZ copper.



ELECTRICAL CHARACTERISTICS (T_J=25°C, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

BV_DSSV_GS=0V, I_D=250µA

I_DSSV_DS=30V, V_GS=0V

_DS=0V ,V_GS=+12V

V_DS=0V ,V_GS=-12V

µA

Forward

Reverse

+100 nA

-100 nA

Gate-Source Leakage Current

I_GSS

ON CHARACTERISTICS

Gate Threshold Voltage

V_GS(TH)V_DS=V_GS, I_D=250µA

1.0

2.5

V_GS=10V, I_D=10A

mΩ

Drain-Source On-State Resistance

R_DS(ON)

V_GS=4.5V, I_D=10A

DYNAMIC PARAMETERS

Input Capacitance

C_ISS

C_OSS

C_RSS

750

130

Output Capacitance

V_DS=15V, V_GS=0V, f=1.0MHz

Reverse Transfer Capacitance

SWITCHING PARAMETERS

Total Gate Charge (Note 1)

Gate to Source Charge

Gate to Drain Charge

Turn-on Delay Time (Note 1)

Rise Time

Q_G

Q_GS

Q_GD

t_D(ON)

t_R

8.8

1.6

V_DS=24V, V_GS=10V, I_D=26A

I_G=1mA (Note 1, 2)

5.2

V_DD=15V, V_GS=10V, I_D=0.5A,

R_G=25Ω (Note 1, 2)

Turn-off Delay Time

t_D(OFF)

t_F

Fall-Time

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Pulsed Current

Drain-Source Diode Forward Voltage (Note 1)

Maximum Body-Diode Continuous Current

Reverse Recovery Time

I_S

I_SM

V_SD

t_rr

104

1.0

I_S=1.0A, V_GS=0V

V_GS=0V, I_S=26A

dI_F/dt=100A/μs

250

μC

Reverse Recovery Charge

Q_rr

0.33

Note: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%.

2. Essentially independent of operating temperature.

UNISONIC TECHNOLOGIES CO., LTD

2 of 5

QW-R209-269.B

www.unisonic.com.tw

123 4 5

下载PDF

与UTT26N03-H相关器件

型号	品牌	描述	获取价格	数据表
UTT28N10	UTC	N-CH	获取价格
UTT2N10-H	UTC	HEXFET	获取价格
UTT30N05	UTC	30A, 50V N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR	获取价格
UTT30N05G-TN3-R	UTC	30A, 50V N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR	获取价格
UTT30N05L-TN3-R	UTC	30A, 50V N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR	获取价格
UTT30N06	UTC	30A, 60V N-CHANNEL POWER MOSFET	获取价格