是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.64 |
Is Samacsys: | N | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (ID): | 0.15 A |
最大漏源导通电阻: | 2 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UT3N01ZG-AL6-R | UTC |
获取价格 |
N-CHANNEL SILICON MOSFET GENERAL-PURPOSE SWITCHING DEVICE | |
UT3N01ZG-AN3-R | UTC |
获取价格 |
N CHANNEL SILICON MOSFET GENERAL-PURPOSE SWITCHING DEVICE APPLICATIONS | |
UT3N06 | UTC |
获取价格 |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
UT3N06_11 | UTC |
获取价格 |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
UT3N06_15 | UTC |
获取价格 |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
UT3N06G-AA3-R | UTC |
获取价格 |
Power Field-Effect Transistor, | |
UT3N06G-AB3-R | UTC |
获取价格 |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
UT3N06G-AE3-R | UTC |
获取价格 |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
UT3N06G-TA3-T | UTC |
获取价格 |
Power Field-Effect Transistor, | |
UT3N06G-TM3-T | UTC |
获取价格 |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |