是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 包装说明: | O-LALF-W2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.80 | 风险等级: | 5.92 |
应用: | GENERAL PURPOSE | 外壳连接: | ISOLATED |
二极管元件材料: | SILICON | 二极管类型: | RECTIFIER DIODE |
JESD-30 代码: | O-LALF-W2 | JESD-609代码: | e0 |
最大非重复峰值正向电流: | 60 A | 相数: | 1 |
端子数量: | 2 | 最大输出电流: | 2 A |
封装主体材料: | GLASS | 封装形状: | ROUND |
封装形式: | LONG FORM | 峰值回流温度(摄氏度): | NOT SPECIFIED |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | TIN LEAD | 端子形式: | WIRE |
端子位置: | AXIAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UT2080E3 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 2A, Silicon, | |
UT20ER | ETC |
获取价格 |
ASIC | |
UT20N03 | UTC |
获取价格 |
N-CHANNEL ENHANCEMENT MODE | |
UT20N03_15 | UTC |
获取价格 |
N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING | |
UT20N03G-K08-5060-R | UTC |
获取价格 |
N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING | |
UT20N03G-TN3-R | UTC |
获取价格 |
N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING | |
UT20N03L-TN3-R | UTC |
获取价格 |
N-CHANNEL ENHANCEMENT MODE | |
UT20N03L-TN3-T | UTC |
获取价格 |
N-CHANNEL ENHANCEMENT MODE | |
UT20N03-TN3-R | UTC |
获取价格 |
N-CHANNEL ENHANCEMENT MODE | |
UT20N03-TN3-T | UTC |
获取价格 |
N-CHANNEL ENHANCEMENT MODE |