Datasheet > USB10P

USB10P

更新时间： 2024-11-09 12:47:19

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	280K
描述
P-Channel 2.5V Specified PowerTrenchTM MOSFET

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USB10P 数据手册

June 1999

USB10P

P-Channel 2.5V Specified PowerTrench^TMMOSFET

General Description

Features

This P -Channel 2.5V specified MOSFET is produced

using Fairchild Semiconductor's advanced PowerTrench

process that has been especially tailored to minimize the

on-state resistance and yet maintain low gate charge for

superior switching performance.

-4.5 A, -20 V. R_DS(ON)= 0.045 W @ V_GS= -4.5 V

R_DS(ON)= 0.065 W @ V_GS= -2.5 V.

Low gate charge (13nC typical).

High performance trench technology for extremely low

R_DS(ON)

These devices are well suited for battery power

applications: load switching and power management,

battery charging circuits, and DC/DC conversion.

SuperSOT^TM-6 package: small footprint (72% smaller than

standard SO-8); low profile (1mm thick).

SuperSOT^TM-6

SOT-223

SOIC-16

SuperSOT^TM-8

SO-8

SOT-23

pin 1

SuperSOT^TM-6

Absolute Maximum Ratings

Symbol Parameter

T_A= 25°C unless otherwise note

Ratings

Units

V_DSS

V_GSS

I_D

Drain-Source Voltage

-20

±8

Gate-Source Voltage - Continuous

Drain Current - Continuous

- Pulsed

(Note 1a)

-4.5

-20

P_D

Maximum Power Dissipation

(Note 1a)

(Note 1b)

1.6

0.8

T_J,T_STGOperating and Storage Temperature Range

-55 to 150

°C

THERMAL CHARACTERISTICS

R_qJA

R_qJC

Thermal Resistance, Junction-to-Ambient (Note 1a)

Thermal Resistance, Junction-to-Case

°C/W

(Note 1)

USB10P Rev.D

12 3 4 5 6 7 8

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