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US3KC

更新时间: 2024-11-25 12:57:03
品牌 Logo 应用领域
森美特 - SUNMATE /
页数 文件大小 规格书
2页 392K
描述
3.0A patch fast recovery diode 800V SMC series

US3KC 数据手册

 浏览型号US3KC的Datasheet PDF文件第2页 
US3AC - US3MC  
SURFACE MOUNT ULTRA FAST RECTIFIER DIODES  
VOLTAGE RANGE: 50 - 1000V  
CURRENT: 3.0 A  
Features  
!
Glass Passivated Die Construction  
!
!
!
!
!
Ideally Suited for Automatic Assembly  
Low Forward Voltage Drop, High Efficiency  
Low Power Loss  
Ultra-Fast Recovery Time  
Plastic Case Material has UL Flammability  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
SMC/DO-214AB  
Classification Rating 94V-O  
B
Dim  
Min  
5.59  
6.60  
2.75  
0.15  
7.75  
0.10  
0.76  
2.00  
Max  
Mechanical Data  
A
B
C
D
E
G
H
J
6.22  
7.11  
3.18  
0.31  
8.13  
0.20  
1.52  
2.62  
A
J
C
!
!
Case: SMC/DO-214AB, Molded Plastic  
Terminals: Solder Plated, Solderable  
per MIL-STD-750, Method 2026  
Polarity: Cathode Band or Cathode Notch  
Marking: Type Number  
!
!
!
D
Weight: 0.21 grams (approx.)  
G
H
E
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics  
TA = 25C unless otherwise specified  
For capacitive load, derate current by 20%.  
Single phase, half wave, 60Hz, resistive or inductive load.  
Symbol  
Characteristic  
Unit  
US3AC US3BC US3DC US3GC US3JC US3KC US3MC  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
V
V
V
50  
35  
50  
100  
70  
200 400  
140 280  
200 400  
600 800 1000  
420 560 700  
V
RRM  
RMS  
V
100  
600 800 1000  
Maximum DC blocking voltage  
V
DC  
Maximum average forward rectified current  
I
(AV)  
3.0  
A
0.375(9.5mm) lead length at TA=55 C  
Peak forward surge current  
I
FSM  
100.0  
1.30  
8.3ms single half sine-wave superimposed on  
rated load (JEDEC Method)  
A
VF  
Maximum instantaneous forward voltage at 3.0A  
1.0  
1.70  
75  
V
Maximum DC reverse current  
at rated DC blocking voltage  
Maximum reverse recovery time  
TA=25 C  
5.0  
250.0  
µA  
I
R
TA=100 C  
(NOTE 1)  
ns  
trr  
50  
Typical junction capacitance (NOTE 2)  
75  
C
J
pF  
C/W  
C
Typical thermal resistance  
Operating junction and storage temperature range  
θ
JL  
R
15.0  
TJ,TSTG  
-65 to +150  
Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A  
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.  
1 of 2  
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