Datasheet > US3AF

US3AF

更新时间： 2024-11-22 01:25:47

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海德 - HDSEMI		/
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描述
MAF Plastic-Encapsulate Diodes

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中文翻译

获取价格

数据手册

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US3AF 数据手册

US3AF THRU US3MF

HD AF80

SMAF Plastic-Encapsulate Diodes

High Efficient Rectifier

Features

●I

50V-1000V

●High surge current capability

SMAF

●VRRM

Glass passivated chip

●

Polarity: Color band denotes cathode

Applications

●Rectifier

Marking

● US3AF-US3MF : US3A-US3M

US3

Item

Symbol Unit

Test Conditions

KF MF

AF BF DF

V_RRM

100 200 300

400 600 800 1000

Repetitive Peak Reverse Voltage

70 140 210 280 420 560 700

Maximum RMS Voltage

RMS

I_F(AV)

Average Forward Current

60HZ Half-sine wave, Resistance

load, TL =110℃

Surge(Non-repetitive)Forward

Current

60Hz Half-sine wave ,1 cycle ,

Ta =25℃

I_FSM

100

T_J

℃

-55~+150

Junction Temperature

Storage Temperature

T_STG

-55 ~ +150

=25℃

）

Electrical Characteristics (T

Unless otherwise specified

US3

Item

Symbol

Unit

Test Conditions

KF MF

AF BF DF

V_F

I_F=3.0A

1.0

1.3

1.7

Peak Forward Voltage

Maximum reverse recovery

time

t_rr

I_F=0.5A,I_R=1.0A,I_rr=0.25A

I_RRM1

I_RRM2

T =25℃

μA

V_RM=V_RRM

Peak Reverse Current

T =100℃

200

47¹⁾

13¹⁾

R_θ

Between junction and ambient

Between junction and terminal

J-A

Thermal

Resistance(Typical)

℃/W

R_θ

J-L

Notes:

Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper

pad areas

igh Diode Semiconductor

12 3 4

中文翻译

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