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US3BAF PDF预览

US3BAF

更新时间: 2024-11-21 12:57:03
品牌 Logo 应用领域
森美特 - SUNMATE /
页数 文件大小 规格书
2页 382K
描述
3.0A patch fast recovery diode 100V SMAF series

US3BAF 数据手册

 浏览型号US3BAF的Datasheet PDF文件第2页 
US3AAF - US3MAF  
SURFACE MOUNT ULTRA FAST RECTIFIER DIODES  
VOLTAGE RANGE: 50 - 1000V  
CURRENT: 3.0 A  
Features  
!
!
!
!
!
!
Glass Passivated Die Construction  
Ideally Suited for Automatic Assembly  
Low Forward Voltage Drop, High Efficiency  
Low Power Loss  
Ultra-Fast Recovery Time  
B
Plastic Case Material has UL Flammability  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
Classification Rating 94V-O  
C
E
Mechanical Data  
SMAF  
!
!
Case: SMAF,Molded Plastic  
Dim Min Max Typ  
D
A
B
C
D
E
H
L
4.75 4.85  
3.68 3.72  
2.57  
2.63  
4.80  
3.70  
2.60  
1.00  
Terminals: Solder Plated, Solderable  
H
per MIL-STD-750, Method 2026  
Polarity:Color band denotes cathode end  
Mounting Position:Any  
L
0.097 1.03  
!
!
!
1.38 1.42 1.40  
0.13 0.17 0.15  
0.63 0.67 0.65  
E
Weight:0.0018 ounce, 0.064 grams  
All Dimensions in mm  
A
TA = 25C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
For capacitive load, derate current by 20%.  
Single phase, half wave, 60Hz, resistive or inductive load.  
Symbol  
Characteristic  
US3BAF  
Unit  
US3AAF  
US3DAF US3GAF US3JAF US3KAF US3MAF  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
V
V
V
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
RRM  
RMS  
V
100  
1000  
Maximum DC blocking voltage  
V
DC  
Maximum average forward rectified current  
I
(AV)  
3.0  
A
0.375(9.5mm) lead length at TA=55 C  
Peak forward surge current  
I
FSM  
100.0  
8.3ms single half sine-wave superimposed on  
rated load (JEDEC Method)  
A
VF  
Maximum instantaneous forward voltage at 3.0A  
1.30  
1.0  
1.70  
V
Maximum DC reverse current  
at rated DC blocking voltage  
Maximum reverse recovery time  
TA=25 C  
5.0  
250.0  
µA  
I
R
TA=100 C  
(NOTE 1)  
ns  
t
rr  
50  
75  
Typical junction capacitance (NOTE 2)  
75  
C
J
pF  
C/W  
C
Typical thermal resistance (NOTE 3)  
Operating junction and storage temperature range  
θ
JL  
R
15.0  
TJ,TSTG  
-65 to +150  
Note:1.Reverse recovery condition I  
F=0.5A,IR=1.0A,Irr=0.25A  
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.  
3.Thermal resistance from junction to lead and from junction to ambient with P.C.B mounted  
on 0.3 x 0.3" (8.0 x 8.0 mm) Copper pad area  
1 of 2  
www.sunmate.tw  

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